Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박태주 | - |
dc.date.accessioned | 2023-05-26T04:53:05Z | - |
dc.date.available | 2023-05-26T04:53:05Z | - |
dc.date.issued | 2022-06 | - |
dc.identifier.citation | Nano Letters, v. 22, NO. 11, Page. 4589-4595 | - |
dc.identifier.issn | 1530-6984;1530-6992 | - |
dc.identifier.uri | https://www.scopus.com/record/display.uri?eid=2-s2.0-85130739774&origin=resultslist&sort=plf-f&src=s&st1=Advanced+Atomic+Layer+Deposition+Ultrathin+and+Continuous+Metal+Thin+Film+Growth+and+Work+Function+Control+Using+the+Discrete+Feeding+Method&sid=6c1c3eb3ad6e1bb92e3166b8c7365ace&sot=b&sdt=b&sl=155&s=TITLE-ABS-KEY%28Advanced+Atomic+Layer+Deposition+Ultrathin+and+Continuous+Metal+Thin+Film+Growth+and+Work+Function+Control+Using+the+Discrete+Feeding+Method%29&relpos=0&citeCnt=0&searchTerm= | en_US |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/181537 | - |
dc.description.abstract | The ultrathin and continuous ruthenium (Ru) film was deposited through an improved atomic layer deposition (ALD) process with a discrete feeding method (DFM), called DF-ALD, employing a cut-in purge step during the precursor feeding. The excess precursor molecules can be physically adsorbed onto the chemisorbed precursors on the substrate during precursor feeding, which screens the reactive sites on the surface. Using DF-ALD, surface coverage of precursors was enhanced because the cut-in purge removes the physisorbed precursors securing the reactive sites beneath them; thus, nucleation density was greatly increased. Therefore, the grain size decreased, which changed the microstructure and increased oxygen impurity concentration. However, a more metallic Ru thin film was formed due to thermodynamic stability and improved physical density. Consequently, DF-ALD enables the deposition of the ultrathin (3 nm) and continuous Ru film with a low resistivity of similar to 60 mu Omega cm and a high effective work function of similar to 4.8 eV. | - |
dc.description.sponsorship | This research was supported by the Nano.Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science and ICT (NRF-2021M3D1A204 3437, NRF-2017M3A7B4049547). | - |
dc.language | en | - |
dc.publisher | American Chemical Society | - |
dc.subject | atomic layer deposition | - |
dc.subject | discrete feeding method | - |
dc.subject | ruthenium | - |
dc.subject | nucleation | - |
dc.subject | resistivity | - |
dc.subject | work function | - |
dc.title | Advanced Atomic Layer Deposition: Ultrathin and Continuous Metal Thin Film Growth and Work Function Control Using the Discrete Feeding Method | - |
dc.type | Article | - |
dc.relation.no | 11 | - |
dc.relation.volume | 22 | - |
dc.identifier.doi | 10.1021/acs.nanolett.2c00811 | - |
dc.relation.page | 4589-4595 | - |
dc.relation.journal | Nano Letters | - |
dc.contributor.googleauthor | Han, Ji Won | - |
dc.contributor.googleauthor | Jin, Hyun Soo | - |
dc.contributor.googleauthor | Kim, Yoon Jeong | - |
dc.contributor.googleauthor | Heo, Ji Sun | - |
dc.contributor.googleauthor | Kim, Woo-Hee | - |
dc.contributor.googleauthor | Ahn, Ji-Hoon | - |
dc.contributor.googleauthor | Kim, Jeong Hwan | - |
dc.contributor.googleauthor | Park, Tae Joo | - |
dc.sector.campus | E | - |
dc.sector.daehak | 공학대학 | - |
dc.sector.department | 재료화학공학과 | - |
dc.identifier.pid | tjp | - |
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