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dc.contributor.author좌용호-
dc.date.accessioned2023-05-25T02:51:45Z-
dc.date.available2023-05-25T02:51:45Z-
dc.date.issued2012-03-
dc.identifier.citationKorean Journal of Materials Research, v. 22, NO. 3, Page. 140-144-
dc.identifier.issn1225-0562;2287-7258-
dc.identifier.urihttp://koreascience.or.kr/article/JAKO201211666469232.pageen_US
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/181461-
dc.description.abstractCompared with bulk material, quantum dots have received increasing attention due to their fascinating physical properties, including optical and electronic properties, which are due to the quantum confinement effect. Especially, Luminescent CdSe quantum dots have been highly investigated due to their tunable size-dependent photoluminescence across the visible spectrum. They are of great interest for technical applications such as light-emitting devices, lasers, and fluorescent labels. In particular, quantum dot-based light-emitting diodes emit high luminance. Quantum dots have very high luminescence properties because of their absorption coefficient and quantum efficiency, which are higher than those of typical dyes. CdSe quantum dots were synthesized as a function of the synthesis time and synthesis temperature. The photoluminescence properties were found strongly to depend on the reaction time and the temperature due to the core size changing. It was also observed that the photoluminescence intensity is decreased with the synthesis time due to the temperature dependence of the band gap. The wavelength of the synthesized quantum dots was about 550-700 nm and the intensity of the photoluminescence increased about 22~70%. After the CdSe quantum dots were synthesized, the particles were found to have grown until reaching a saturated concentration as time increased. Red shift occurred because of the particle growth. The microstructure and phase developments were measured by transmission electron microscopy (TEM) and X-ray diffractometry (XRD), respectively.-
dc.description.sponsorship본 연구는 한국생산기술연구원의 희소금속산업 육성인프라 기반구축사업(과제번호: N000600001)의 지원을 받아 수행되었으며 이에 감사드립니다.-
dc.languageko-
dc.publisher한국재료학회-
dc.subjectCdSe-
dc.subjectquantum dot-
dc.subjectoptical absorption-
dc.subjectphotoluminescence-
dc.titleInjection 온도 및 합성시간에 따른 CdSe 양자점 합성 및 특성-
dc.title.alternativeSynthesis and Characterization of CdSe Quantum Dot with Injection Temperature and Reaction Time-
dc.typeArticle-
dc.relation.no3-
dc.relation.volume22-
dc.identifier.doi10.3740/MRSK.2012.22.3.140-
dc.relation.page140-144-
dc.relation.journalKorean Journal of Materials Research-
dc.contributor.googleauthor엄누시아-
dc.contributor.googleauthor김범성-
dc.contributor.googleauthor김택수-
dc.contributor.googleauthor좌용호-
dc.sector.campusE-
dc.sector.daehak공학대학-
dc.sector.department재료화학공학과-
dc.identifier.pidchoa15-
Appears in Collections:
COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > MATERIALS SCIENCE AND CHEMICAL ENGINEERING(재료화학공학과) > Articles
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