Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 이정호 | - |
dc.date.accessioned | 2023-05-25T01:51:08Z | - |
dc.date.available | 2023-05-25T01:51:08Z | - |
dc.date.issued | 2004-04 | - |
dc.identifier.citation | Japanese Journal of Applied Physics, v. 43, NO. 4B, Page. 1825-1828 | - |
dc.identifier.issn | 0021-4922;1347-4065 | - |
dc.identifier.uri | https://iopscience.iop.org/article/10.1143/JJAP.43.1825 | en_US |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/181425 | - |
dc.description.abstract | We Studied the effect of selective oxidation conditions on gate oxide characteristics. Selective oxidation in hydrogen-rich wet ambient at 850degreesC-950degreesC was found to generate defects both at the SiO2/Si interface and in oxide bulk, resulting in a higher stress-induced leakage current. The degradation of the device can be explained by the incorporation of hydrogen into the gate oxide during a high-temperature selective oxidation process. The plasma reoxidation process induced fewer defects due to radical oxidation at low temperature. | - |
dc.language | en | - |
dc.publisher | IOP Publishing Ltd | - |
dc.subject | selective oxidation | - |
dc.subject | plasma reoxidation | - |
dc.subject | W/poly-Si | - |
dc.subject | defect generation | - |
dc.title | Effect of selective oxidation conditions on defect generation in gate oxide | - |
dc.type | Article | - |
dc.relation.no | 4B | - |
dc.relation.volume | 43 | - |
dc.identifier.doi | 10.1143/JJAP.43.1825 | - |
dc.relation.page | 1825-1828 | - |
dc.relation.journal | Japanese Journal of Applied Physics | - |
dc.contributor.googleauthor | Cho, Heung Jae | - |
dc.contributor.googleauthor | Lim, Kwan Yong | - |
dc.contributor.googleauthor | Jang, Se aug | - |
dc.contributor.googleauthor | Lee, Jung ho | - |
dc.contributor.googleauthor | Oh, Jae geun | - |
dc.contributor.googleauthor | Kim, Yong soo | - |
dc.contributor.googleauthor | Yang, Hong seon | - |
dc.contributor.googleauthor | Sohn, Hyun chul | - |
dc.sector.campus | E | - |
dc.sector.daehak | 공학대학 | - |
dc.sector.department | 재료화학공학과 | - |
dc.identifier.pid | jungho | - |
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