Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 유봉영 | - |
dc.date.accessioned | 2023-05-19T05:42:13Z | - |
dc.date.available | 2023-05-19T05:42:13Z | - |
dc.date.issued | 2022-07 | - |
dc.identifier.citation | Scientific Reports, v. 12, NO. 1, article no. 11689, Page. 1-8 | - |
dc.identifier.issn | 2045-2322 | - |
dc.identifier.uri | https://www.nature.com/articles/s41598-022-15955-4 | en_US |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/180922 | - |
dc.description.abstract | The fabrication of freestanding bendable films without polymer substrates is demonstrated as a capacitive humidity-sensing material. The bendable and porous SiO2/Si films are simply prepared by electrochemical-assisted stripping, metal-assisted chemical etching, followed by oxidation procedures. The capacitive humidity-sensing properties of the fabricated porous SiO2/Si film are characterized as a function of the relative humidity and frequency. The remarkable sensing performance is demonstrated in the wide RH range from 13.8 to 79.0%. The sensing behavior of the porous SiO2/Si film is studied by electrochemical impedance spectroscopy analysis. Additionally, the reliability of the porous SiO2/Si sensing material is confirmed by cyclic and long-term sensing tests. | - |
dc.description.sponsorship | This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT & Future Planning (No. 2015R1A5A1037548) and by the National Research Foundation of Korea (NRF) (No. NRF-2020R1A2C2009462). This research was also supported by the Technology Innovation Program (20017189, Development of non-cyanide gold bump solution and plating process for the semiconductor device bonding process) funded By the Ministry of Trade, Industry & Energy (MOTIE, Korea). | - |
dc.language | en | - |
dc.publisher | Nature Publishing Group | - |
dc.title | Capacitive humidity sensing properties of freestanding bendable porous SiO2/Si thin films | - |
dc.type | Article | - |
dc.relation.no | 1 | - |
dc.relation.volume | 12 | - |
dc.identifier.doi | 10.1038/s41598-022-15955-4 | - |
dc.relation.page | 1-8 | - |
dc.relation.journal | Scientific Reports | - |
dc.contributor.googleauthor | Park, Soobin | - |
dc.contributor.googleauthor | Seo, Jinmyeong | - |
dc.contributor.googleauthor | Park, Jungjoon | - |
dc.contributor.googleauthor | Hwang, Inseong | - |
dc.contributor.googleauthor | Lee, Han-Seung | - |
dc.contributor.googleauthor | Jung, Hyunsung | - |
dc.contributor.googleauthor | Yoo, Bongyoung | - |
dc.sector.campus | E | - |
dc.sector.daehak | 공학대학 | - |
dc.sector.department | 재료화학공학과 | - |
dc.identifier.pid | byyoo | - |
dc.identifier.article | 11689 | - |
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