Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 최창환 | - |
dc.date.accessioned | 2022-12-14T05:05:24Z | - |
dc.date.available | 2022-12-14T05:05:24Z | - |
dc.date.issued | 2022-09 | - |
dc.identifier.citation | MICROMACHINES, v. 13, NO. 9, article no. 1498, Page. 1-10 | en_US |
dc.identifier.issn | 2072-666X;2072-666X | en_US |
dc.identifier.uri | https://www.mdpi.com/2072-666X/13/9/1498 | en_US |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/178300 | - |
dc.description.abstract | In this paper, we demonstrate a device using a Ni/SiN/BN/p(+)-Si structure with improved performance in terms of a good ON/OFF ratio, excellent stability, and low power consumption when compared with single-layer Ni/SiN/p(+)-Si and Ni/BN/p(+)-Si devices. Its switching mechanism can be explained by trapping and de-trapping via nitride-related vacancies. We also reveal how higher nonlinearity and rectification ratio in a bilayer device is beneficial for enlarging the read margin in a cross-point array structure. In addition, we conduct a theoretical investigation for the interface charge accumulation/depletion in the SiN/BN layers that are responsible for defect creation at the interface and how this accounts for the improved switching characteristics. | en_US |
dc.description.sponsorship | This work was supported in part by the Dongguk University Research Fund of 2020 by the Ministry of Science and Higher Education of Russian Federation (Project No. 13.2251.21.0098) and a National Research Foundation of Korea (NRF) grant funded by the uMinistry of Science and ICT (2021K1A3A1A49098073). | en_US |
dc.language | en | en_US |
dc.publisher | MDPI | en_US |
dc.source | 96575_최창환.pdf | - |
dc.subject | resistive switching | en_US |
dc.subject | silicon nitride | en_US |
dc.subject | boron nitride | en_US |
dc.subject | self-rectification | en_US |
dc.title | Memristive Switching and Density-Functional Theory Calculations in Double Nitride Insulating Layers | en_US |
dc.type | Article | en_US |
dc.relation.no | 9 | - |
dc.relation.volume | 13 | - |
dc.identifier.doi | 10.3390/mi13091498 | en_US |
dc.relation.page | 1-10 | - |
dc.relation.journal | MICROMACHINES | - |
dc.contributor.googleauthor | Khan, Sobia Ali | - |
dc.contributor.googleauthor | Hussain, Fayyaz | - |
dc.contributor.googleauthor | Chung, Daewon | - |
dc.contributor.googleauthor | Rahmani, Mehr Khalid | - |
dc.contributor.googleauthor | Ismail, Muhammd | - |
dc.contributor.googleauthor | Mahata, Chandreswar | - |
dc.contributor.googleauthor | Abbas, Yawar | - |
dc.contributor.googleauthor | Abbas, Haider | - |
dc.contributor.googleauthor | Choi, Changhwan | - |
dc.contributor.googleauthor | Mikhaylov, Alexey N. | - |
dc.contributor.googleauthor | Shchanikov, Sergey A. | - |
dc.contributor.googleauthor | Yang, Byung-Do | - |
dc.contributor.googleauthor | Kim, Sungjun | - |
dc.sector.campus | S | - |
dc.sector.daehak | 공과대학 | - |
dc.sector.department | 신소재공학부 | - |
dc.identifier.pid | cchoi | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.