Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 최창환 | - |
dc.date.accessioned | 2022-12-14T05:00:54Z | - |
dc.date.available | 2022-12-14T05:00:54Z | - |
dc.date.issued | 2022-12 | - |
dc.identifier.citation | APPLIED SURFACE SCIENCE, v. 605, article no. 154614, Page. 1-11 | en_US |
dc.identifier.issn | 0169-4332;1873-5584 | en_US |
dc.identifier.uri | https://www.sciencedirect.com/science/article/pii/S0169433222021468?via%3Dihub | en_US |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/178298 | - |
dc.description.abstract | This study first attempted to fabricate and study the properties of flash memory devices using amorphous In-Ga-sn-O (IGTO) material as a channel material. Compared with devices using amorphous In-Ga-Zn-O (IGZO) ma-terial as a channel material, amorphous IGTO flash memory devi ces exhibit improved memory characteristics with faster write/erase speeds (10 mu s), improved program/erase (P/E) efficiency, lower sub-threshold swing (SS), higher field effect mobility (mu FE) and enhanced on-current to off-current ratio (ION/IOFF). The erasing method and possible mechanism to enhance erasing efficiency utilizing light-assisted negative gate biasing were discussed in this paper. The photo transition is closely related to oxygen vacancy, therefore, the light-assisted approach photo -ionizing oxygen vacancies to generate holes could be a way to achieve erasing under the negative gate bias. Compared with amorphous IGZO thin film, amorphous IGTO thin film has a lower electron affinity and more oxygen vacancies that can provide more holes. In the P/E characterization under different circumstances, amorphous IGTO devices had a wider memory window (MW), and longer retention behaviors. These properties broaden the applications of modern flash device circuits and serve as a reference for future advances in flash storage technology. | en_US |
dc.description.sponsorship | Acknowledgments This research was supported by the National Research Foundation of Korea (NRF) funded by the Ministry of science, ICT & Future Planning. (NRF-2022R1A2C2012333, NRF-2020M3F3A2A02082449, NRF-2022M3I7A2079155, NRF-2022M3H4A6A010356636) . | en_US |
dc.language | en | en_US |
dc.publisher | ELSEVIER | en_US |
dc.subject | Amorphous-indium-gallium-tin-oxide (a-In-Ga-sn-O) | en_US |
dc.subject | Thin-film NAND flash memory | en_US |
dc.subject | Atomic layer deposition (ALD) | en_US |
dc.subject | Light-assisted erasing | en_US |
dc.subject | Charge trapping | en_US |
dc.title | Low temperature (< 150? Text Color) annealed amorphous indium-gallium-tin oxide (IGTO) thin-film for flash memory application | en_US |
dc.type | Article | en_US |
dc.relation.volume | 605 | - |
dc.identifier.doi | 10.1016/j.apsusc.2022.154614 | en_US |
dc.relation.page | 1-11 | - |
dc.relation.journal | APPLIED SURFACE SCIENCE | - |
dc.contributor.googleauthor | Wang, Zeli | - |
dc.contributor.googleauthor | Xu, Hongwei | - |
dc.contributor.googleauthor | Zhang, Yuanju | - |
dc.contributor.googleauthor | Cho, Hyeon Cheol | - |
dc.contributor.googleauthor | Jeong, Jae Kyeong | - |
dc.contributor.googleauthor | Choi, Changhwan | - |
dc.sector.campus | S | - |
dc.sector.daehak | 공과대학 | - |
dc.sector.department | 신소재공학부 | - |
dc.identifier.pid | cchoi | - |
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