Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 안진호 | - |
dc.date.accessioned | 2022-12-12T05:01:46Z | - |
dc.date.available | 2022-12-12T05:01:46Z | - |
dc.date.issued | 2022-03 | - |
dc.identifier.citation | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, v. 40, NO. 2, article no. 22406, Page. 1-8 | en_US |
dc.identifier.issn | 0734-2101;1520-8559 | en_US |
dc.identifier.uri | https://avs.scitation.org/doi/10.1116/6.0001519 | en_US |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/178223 | - |
dc.description.abstract | A novel precursor, 1,1,1-tris(dimethylamino)disilane {TADS, [(H3C)2N]3Si2H3}, is used to deposit silicon dioxide (SiO2) films in a temperature range of 115-480 °C by thermal atomic layer deposition (tALD) and plasma-enhanced atomic layer deposition (PEALD) techniques. Compared to tris(dimethylamino)silane (TDMAS), the additional Si-Si bond in TADS is expected to enhance the reactivity of the molecule due to the polarization of the bond. In the tALD process, TADS gives a growth rate of 0.06 nm/cycle, which is approximately 20% higher than that of TDMAS, and an excellent conformality (>95% step coverage) in high aspect ratio nanotrenches (6:1). In the case of the PEALD process, TADS leads to not only a higher or at least comparable growth rates (0.11 nm/cycle), but also a higher bulk film density (∼2.38 g/cm3). As a result, the PEALD SiO2 films of TADS show a wet-etch rate down to 1.6 nm/min in 200:1 HF, which is comparable to that of the thermal oxide. Analyzed with Fourier-Transform Infrared (FTIR), the SiO2 films contain predominant Si−O bonds and a low level of Si−H and O−H bonds, consistent with the observed high wet-etch resistance. Furthermore, the PEALD SiO2 films deposited at 310 °C have at least 75% step coverage in high aspect ratio nanotrenches, suggesting that TADS is applicable for forming high-quality SiO2 films on both planar and patterned surfaces. | en_US |
dc.description.sponsorship | The authors thank DuPont for the financial support in this work and the preparation of the TADS precursor. J. Ahn and J. Kim also acknowledge partial financial support by the Brain Pool Program through the National Research Foundation by the Ministry of Science and ICT in Korea (Grant No. 2019H1D3A2A01101691). This work was partially supported by the Fostering Global Talents for Innovative Growth Program (No. P0008750) through the Korea Institute for Advancement of Technology (KIAT) and the Ministry of Trade, Industry, and Energy (MOTIE) in Korea. The authors would like to thank R. M. Wallace for technical discussion and support. | en_US |
dc.language | en | en_US |
dc.publisher | AVS Science and Technology Society | en_US |
dc.title | High wet-etch resistance SiO2 films deposited by plasma-enhanced atomic layer deposition with 1,1,1-tris(dimethylamino)disilane | en_US |
dc.type | Article | en_US |
dc.relation.no | 2 | - |
dc.relation.volume | 40 | - |
dc.identifier.doi | 10.1116/6.0001519 | en_US |
dc.relation.page | 1-8 | - |
dc.relation.journal | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films | - |
dc.contributor.googleauthor | Hwang, Su Min | - |
dc.contributor.googleauthor | Kim, Harrison Sejoon | - |
dc.contributor.googleauthor | Le, Dan N. | - |
dc.contributor.googleauthor | Sahota, Akshay | - |
dc.contributor.googleauthor | Lee, Jaebeom | - |
dc.contributor.googleauthor | Jung, Yong Chan | - |
dc.contributor.googleauthor | Kim, Sang Woo | - |
dc.contributor.googleauthor | Kim, Si Joon | - |
dc.contributor.googleauthor | Choi, Rino | - |
dc.contributor.googleauthor | Ahn, Jinho | - |
dc.contributor.googleauthor | Hwang, Byung Keun | - |
dc.contributor.googleauthor | Zhou, Xiaobing | - |
dc.contributor.googleauthor | Kim, Jiyoung | - |
dc.sector.campus | S | - |
dc.sector.daehak | 공과대학 | - |
dc.sector.department | 신소재공학부 | - |
dc.identifier.pid | jhahn | - |
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