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dc.contributor.author한재덕-
dc.date.accessioned2022-10-27T01:41:26Z-
dc.date.available2022-10-27T01:41:26Z-
dc.date.issued2021-02-
dc.identifier.citation2021 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE (ISSCC), page. 128-129en_US
dc.identifier.issn0193-6530en_US
dc.identifier.urihttps://ieeexplore.ieee.org/document/9366012en_US
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/175855-
dc.description.abstractThe ever-expanding demand for ultra-high-speed interconnects has driven the development of wireline TXs operating at >100Gb/s per lane [1]-[4]. This paper presents a PAM-4 TX achieving 200Gb/s with improved output bandwidth and output swing by minimizing the driver capacitance with pull-up current sources, multiplexing with flexible clock timing control, and employing a fully reconfigurable 5-tap FFE architecture.en_US
dc.language.isoenen_US
dc.publisherIEEEen_US
dc.titleAn Output-Bandwidth-Optimized 200Gb/s PAM-4 100Gb/s NRZ Transmitter with 5-Tap FFE in 28nm CMOSen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/ISSCC42613.2021.9366012en_US
dc.relation.page128-129-
dc.contributor.googleauthorChoi, Minsoo-
dc.contributor.googleauthorWang, Zhongkai-
dc.contributor.googleauthorLee, Kyoungtae-
dc.contributor.googleauthorPark, Kwanseo-
dc.contributor.googleauthorLiu, Zhaokai-
dc.contributor.googleauthorBiswas, Ayan-
dc.contributor.googleauthorHan, Jaeduk-
dc.contributor.googleauthorAlon, Elad-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentSCHOOL OF ELECTRONIC ENGINEERING-
dc.identifier.pidjdhan-
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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