Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박재근 | - |
dc.date.accessioned | 2022-10-13T01:00:19Z | - |
dc.date.available | 2022-10-13T01:00:19Z | - |
dc.date.issued | 2021-01 | - |
dc.identifier.citation | NANOTECHNOLOGY, v. 32, no. 5, article no. 055301 | en_US |
dc.identifier.issn | 0957-4484; 1361-6528 | en_US |
dc.identifier.uri | https://iopscience.iop.org/article/10.1088/1361-6528/abb04e | en_US |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/175292 | - |
dc.description.abstract | Magnetic tunneling junction (MTJ) materials such as CoFeB, Co, Pt, MgO, and the hard mask material such as W and TiN were etched with a reactive ion beam etching (RIBE) system using H-2/NH3. By using gas mixtures of H-2 and NH3, especially with the H-2/NH3( 2:1) ratio, higher etch rates of MTJ related materials and higher etch selectivities over mask materials (˃30) could be observed compared to those etching using pure H-2( no etching) and NH3. In addition, no significant chemical and physical damages were observed on etched magnetic materials surfaces and, for CoPt and MTJ nanoscale patterns etched by the H-2/NH3( 2:1) ion beam, highly anisotropic etch profiles ˃83 degrees with no sidewall redeposition could be observed. The higher etch rates of magnetic materials such as CoFeB by the H-2/NH3( 2:1) ion beam compared to those by H-2 ion beam or NH3 ion beam are believed to be related to the formation of volatile metal hydrides (MH, M = Co, Fe, etc) through the reduction of M-NHx( x = 1 similar to 3) formed in the CoFeB surface by the exposure to NH3 ion beam. It is believed that the H-2/NH3 RIBE is a suitable technique in the etching of MTJ materials for the next generation nanoscale spin transfer torque magnetic random access memory (STT-MRAM) devices. | en_US |
dc.description.sponsorship | This work is supported by the Samsung Electronics' university R&D program. [Development of small pitch MTJ patterning process using RIBE]. | en_US |
dc.language.iso | en | en_US |
dc.publisher | IOP PUBLISHING LTD | en_US |
dc.subject | reactive ion beam etching (RIBE); magnetic random access memory (MRAM); magnetic tunnel junction (MTJ); x-ray photoelectron spectroscopy (XPS); H2; NH3 | en_US |
dc.title | Etch characteristics of magnetic tunnel junction materials using H-2/NH3 reactive ion beam | en_US |
dc.type | Article | en_US |
dc.relation.no | 5 | - |
dc.relation.volume | 32 | - |
dc.identifier.doi | 10.1088/1361-6528/abb04e | en_US |
dc.relation.page | 0-0 | - |
dc.relation.journal | NANOTECHNOLOGY | - |
dc.contributor.googleauthor | Kim, Ju Eun | - |
dc.contributor.googleauthor | Kim, Doo San | - |
dc.contributor.googleauthor | Gill, You Jung | - |
dc.contributor.googleauthor | Jang, Yun Jong | - |
dc.contributor.googleauthor | Kim, Ye Eun | - |
dc.contributor.googleauthor | Cho, Hanna | - |
dc.contributor.googleauthor | Won, Bok-Yeon | - |
dc.contributor.googleauthor | Kwon, Oik | - |
dc.contributor.googleauthor | Yoon, Kukhan | - |
dc.contributor.googleauthor | Park, Jea-Gun | - |
dc.relation.code | 2021002941 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | SCHOOL OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | parkjgl | - |
dc.identifier.orcid | https://orcid.org/0000-0002-5831-2854 | - |
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