Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 안드레 | - |
dc.date.accessioned | 2022-09-27T04:42:51Z | - |
dc.date.available | 2022-09-27T04:42:51Z | - |
dc.date.issued | 2020-12 | - |
dc.identifier.citation | ADVANCED ELECTRONIC MATERIALS, v. 7, no. 2, article no. 2000866, Page. 1-9 | en_US |
dc.identifier.issn | 2199-160X | en_US |
dc.identifier.uri | https://onlinelibrary.wiley.com/doi/10.1002/aelm.202000866 | en_US |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/174114 | - |
dc.description.abstract | Transition metal carbides, called MXenes, can be used for MXene-based unique electronic devices such as new types of batteries, energy storage devices, and supercapacitors, where MXene is used as an electrode. The unique surface properties of MXene and 2D structure can be further applied to the new electronic devices. In this paper, the unique insulating properties of partially oxidized MXene (Ti3C2Tx) sheets are utilized for memory storage and electronic synapse applications. The device exhibits threshold resis-tive switching characteristics based on Ag+ migration dynamics. It is found that this Ag+ cation migration is similar to Ca2+ ion dynamics of a biological synapse, and thus, biological synapse functions such as intrusion/extrusion of Ag+ cation, paired-pulse facilitation (PPF), post-tetanic potentiation (PTP), short-term potentiation (STP), and transition of STP to long-term potentiation (LTP) are well-emulated. It is believed that this device development can be potentially used in the next-generation hardware-based artificial intelligence systems. | en_US |
dc.description.sponsorship | A.S. and M.A. contributed equally to this work. This research was supported by M3D Platform Project (NRF-2020M3F3A2A02082449) as well as Research Program (2018R1A2B2006708) funded by the National Research Foundation under the Ministry of Science and ICT, Republic of Korea. This work was also supported by the Korea Institute of Energy Technology Evaluation and Planning (KETEP) and the Ministry of Trade, Industry & Energy (MOTIE) of the Republic of Korea (2018201010636A). This work was partly supported by Institute of Information & Communications Technology Planning & Evaluation (IITP) grant funded by the Korea Government (MSIT) (No. 2020-0-01373, Artificial Intelligence Graduate School Program (Hanyang University)) and the research fund of Hanyang University (HY- 202000000700006) | en_US |
dc.language.iso | en | en_US |
dc.publisher | WILEY | en_US |
dc.subject | diffusive memristors; electronic synapses; MXene; resistive switching; threshold switching | en_US |
dc.title | Partially Oxidized MXene Ti3C2Tx Sheets for Memristor having Synapse and Threshold Resistive Switching Characteristics | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1002/aelm.202000866 | en_US |
dc.relation.page | 1-9 | - |
dc.relation.journal | ADVANCED ELECTRONIC MATERIALS | - |
dc.contributor.googleauthor | Sokolov, Andrey | - |
dc.contributor.googleauthor | Ali, Mumtaz | - |
dc.contributor.googleauthor | Li, Hui | - |
dc.contributor.googleauthor | Jeon, Yu-Rim | - |
dc.contributor.googleauthor | Ko, Min Jae | - |
dc.contributor.googleauthor | Choi, Changhwan | - |
dc.relation.code | 2020050186 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | SCHOOL OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | andrey | - |
dc.identifier.researcherID | ABI-7300-2020 | - |
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