Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 김도환 | - |
dc.date.accessioned | 2022-09-05T00:08:26Z | - |
dc.date.available | 2022-09-05T00:08:26Z | - |
dc.date.issued | 2020-11 | - |
dc.identifier.citation | JOURNAL OF MATERIALS CHEMISTRY C, v. 8, no. 47, page. 17107-17113 | en_US |
dc.identifier.issn | 2050-7526 | - |
dc.identifier.issn | 2050-7534 | - |
dc.identifier.uri | https://pubs.rsc.org/en/content/articlelanding/2020/TC/D0TC02364G | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/172725 | - |
dc.description.abstract | In this paper, we report a facile method to fabricate high-capacitance polyurethane ionogel-based bilayer dielectrics for low-voltage and high-performance pressure-sensitive top-gate organic thin-film transistors (OTFTs). These elastomeric bilayer dielectrics are made of a neat polyurethane top layer and a bottom ionogel layer composed of a polyurethane-ionic liquid gel prepared by a simple, cost-effective dissolution process. Utilizing the various formulated ionogels with different ionic contents, controlled high capacitance values between 10 and 30 mu F cm(-2) are achieved, which is attributed to the formation of a combined electric double layer and dipole polarization in the ionogel/polyurethane layers, respectively. Remarkably increased hole mobilities up to similar to 2 cm(2) V-1 s(-1) and a low operation voltage less than 6 V are achieved with a poly(9,9-dioctylfuorene-co-bithiophene) (F8T2) liquid-crystalline polymer semiconductor and by optimizing the ionic content at the bottom ionogel layer of the OTFTs. Additionally, the optimized F8T2 OTFTs show a low threshold voltage of -2 V, a high on/off ratio of similar to 10(5), and excellent operational stability. Finally, we investigate the pressure sensing properties of the OTFTs by applying pressure on top of the polyurethane ionogel-based bilayer gate dielectric. The OTFTs showed a pressure sensitivity of 0.12 kPa(-1) over a wide pressure range. This study demonstrates that employing a thin polyurethane overlayer on an ionogel dielectric is a simple and effective approach to enhance the interface contact for both printing and thermal top-gate electrode deposition for high-performance ionogel-based OTFTs and pressure sensors. | en_US |
dc.description.sponsorship | This work was supported by the Center for Advanced Soft-Electronics (2013M3A6A5073183 and 2014M3A6A5060932) and the Basic Science Research Program (2020R1A2C3014237) funded by the National Research Foundation of Korea through the Ministry of Science & ICT. | en_US |
dc.language.iso | en | en_US |
dc.publisher | ROYAL SOC CHEMISTRY | en_US |
dc.title | High-capacitance polyurethane ionogels for low-voltage operated organic transistors and pressure sensors | en_US |
dc.type | Article | en_US |
dc.relation.no | 47 | - |
dc.relation.volume | 8 | - |
dc.identifier.doi | 10.1039/d0tc02364g | - |
dc.relation.page | 17107-17113 | - |
dc.relation.journal | JOURNAL OF MATERIALS CHEMISTRY C | - |
dc.contributor.googleauthor | Tabi, Grace Dansoa | - |
dc.contributor.googleauthor | Kim, Joo Sung | - |
dc.contributor.googleauthor | Nketia-Yawson, Benjamin | - |
dc.contributor.googleauthor | Kim, Do Hwan | - |
dc.contributor.googleauthor | Noh, Young-Yong | - |
dc.relation.code | 2020051689 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF CHEMICAL ENGINEERING | - |
dc.identifier.pid | dhkim76 | - |
dc.identifier.orcid | https://orcid.org/0000-0003-3003-8125 | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.