Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 정재경 | - |
dc.date.accessioned | 2022-08-30T01:44:24Z | - |
dc.date.available | 2022-08-30T01:44:24Z | - |
dc.date.issued | 2020-11 | - |
dc.identifier.citation | SCIENTIFIC REPORTS, v. 10, no. 1, article no. 18868 | en_US |
dc.identifier.issn | 2045-2322 | - |
dc.identifier.uri | https://www.nature.com/articles/s41598-020-76046-w | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/172637 | - |
dc.description.abstract | We investigated the effect of film thickness (geometrical confinement) on the structural evolution of sputtered indium-zinc-tin oxide (IZTO) films as high mobility n-channel semiconducting layers during post-treatment at different annealing temperatures ranging from 350 to 700 degrees C. Different thicknesses result in IZTO films containing versatile phases, such as amorphous, low-, and high-crystalline structures even after annealing at 700 degrees C. A 19-nm-thick IZTO film clearly showed a phase transformation from initially amorphous to polycrystalline bixbyite structures, while the ultra-thin film (5 nm) still maintained an amorphous phase. Transistors including amorphous and low crystalline IZTO films fabricated at 350 and 700 degrees C show reasonable carrier mobility (mu(FE)) and on/off current ratio (I-ON/OFF) values of 22.4-35.9 cm(2) V-1 s(-1) and 1.0-4.0x10(8), respectively. However, their device instabilities against positive/negative gate bias stresses (PBS/NBS) are unacceptable, originating from unsaturated bonding and disordered sites in the metal oxide films. In contrast, the 19-nm-thick annealed IZTO films included highly-crystalline, 2D spherulitic crystallites and fewer grain boundaries. These films show the highest mu(FE) value of 39.2 cm(2) V-1 s(-1) in the transistor as well as an excellent I-ON/OFF value of 9.7x10(8). Simultaneously, the PBS/NBS stability of the resulting transistor is significantly improved under the same stress condition. This promising superior performance is attributed to the crystallization-induced lattice ordering, as determined by highly-crystalline structures and the associated formation of discrete donor levels (similar to 0.31 eV) below the conduction band edge. | en_US |
dc.description.sponsorship | This work was supported by a research Grant from Samsung Display and National R&D Program through the National Research Foundation of Korea (NRF) funded by Ministry of Science and ICT(2020M3F3A2A01081240). HY thanks the National Research Foundation (NRF) of Korea funded by the Korean government (2020R1A4A3079923). | en_US |
dc.language.iso | en | en_US |
dc.publisher | NATURE PUBLISHING GROUP | en_US |
dc.title | Boosting Carrier Mobility and Stability in Indium-Zinc-Tin Oxide Thin-Film Transistors through Controlled Crystallization | en_US |
dc.type | Article | en_US |
dc.relation.volume | 10 | - |
dc.identifier.doi | 10.1038/s41598-020-76046-w | - |
dc.relation.page | 18868-18868 | - |
dc.relation.journal | SCIENTIFIC REPORTS | - |
dc.contributor.googleauthor | On, Nuri | - |
dc.contributor.googleauthor | Kim, Bo Kyoung | - |
dc.contributor.googleauthor | Kim, Yerin | - |
dc.contributor.googleauthor | Kim, Eun Hyun | - |
dc.contributor.googleauthor | Lim, Jun Hyung | - |
dc.contributor.googleauthor | Hosono, Hideo | - |
dc.contributor.googleauthor | Kim, Junghwan | - |
dc.contributor.googleauthor | Yang, Hoichang | - |
dc.contributor.googleauthor | Jeong, Jae Kyeong | - |
dc.relation.code | 2020051242 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | SCHOOL OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | jkjeong1 | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.