Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 송윤흡 | - |
dc.date.accessioned | 2022-08-29T01:11:03Z | - |
dc.date.available | 2022-08-29T01:11:03Z | - |
dc.date.issued | 2020-11 | - |
dc.identifier.citation | Applied Science and Convergence Technology, v. 29, no. 6, page. 183-185 | en_US |
dc.identifier.issn | 2288-6559 | - |
dc.identifier.uri | https://www.e-asct.org/journal/view.html?doi=10.5757/ASCT.2020.29.6.183 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/172569 | - |
dc.description.abstract | We fabricated a capacitor with polycrystalline gallium phosphide (Poly-GaP), which has high thermal immunity for better CMOS compactness, as afloating gate. Using a phosphide beam flux, in a molecular beam epitaxy chamber, 0.5 μm of Poly-GaP film was successfully grown on silicon at 250℃. Its device characteristics were compared with capacitors that instead used Poly-GaAs and Poly-Si. It is revealed that the memory window for thecapacitor with the Poly-GaP floating film is comparable to the Poly-GaAs one, and still shows approximately twice the value of the Poly-Si. Based onthese results, we conclude that flash memory with a Poly-GaP floating material can provide not only a wider memory window due to significanttraps in III-V compounds, but also thermal immunity of the GaP material, which can be applied for 2D scaled flash memory. | en_US |
dc.description.sponsorship | This research was supported by the Ministry of Trade, Industry & Energy (MOTIE (project number 20003808)) and Korea Semiconductor Research Consortium (KSRC) support program for the development of the future semiconductor device. The author from KIST acknowledges partial support from the KIST institutional program. | en_US |
dc.language.iso | en | en_US |
dc.publisher | Korean Vacuum Society | en_US |
dc.subject | III-V floating gate | en_US |
dc.subject | III-V memory | en_US |
dc.subject | Memory window | en_US |
dc.subject | Molecular beam epitaxy | en_US |
dc.subject | Polycrytalline gallium phosphide | en_US |
dc.title | Memory Characteristics of Capacitors with Poly-GaP Floating Gates | en_US |
dc.type | Article | en_US |
dc.relation.no | 6 | - |
dc.relation.volume | 29 | - |
dc.identifier.doi | 10.5757/ASCT.2020.29.6.183 | - |
dc.relation.page | 183-185 | - |
dc.relation.journal | Applied Science and Convergence Technology | - |
dc.contributor.googleauthor | Shin, Sang Hoon | - |
dc.contributor.googleauthor | Oh, Young Taek | - |
dc.contributor.googleauthor | Song, Jin Dong | - |
dc.contributor.googleauthor | Song, Yun Heub | - |
dc.relation.code | 2020040558 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | SCHOOL OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | yhsong2008 | - |
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