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dc.contributor.author박진구-
dc.date.accessioned2022-08-11T01:40:00Z-
dc.date.available2022-08-11T01:40:00Z-
dc.date.issued2021-02-
dc.identifier.citationSolid State Phenomena, v. 314, Page. 161-166en_US
dc.identifier.issn1662-9779-
dc.identifier.urihttps://www.scientific.net/SSP.314.161-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/172293-
dc.description.abstractIn this study, organic strip, particle removal efficiency and wettability were investigated at different mixing concentrations of diluted Sulfuric-Peroxide-HF (DSP+ ) solutions with and without the addition of IPA. Organic strip evaluation was carried out with KrF photoresist (PR), and the strip rate was increased rapidly with the increase in H2SO4 concentration mixed with DI water (DIW). The effects of H2O2 and IPA addition on diluted H2SO4 were observed below 30 vol% of H2SO4. The thickness of PR was increased with the addition of H2O2 to the solutions and the strip rate was increased when IPA was added. Silica particles were used to evaluate particle removal efficiency. The concentration of HF was the predominant factor of increasing PRE, and the addition of H2SO4 and H2O2 assisted in obtaining high PRE, while IPA addition reduced PRE. Decreasing of contact angle was observed with an increase of IPA addition to DSP+ solutions, and improved wettability of DSP+ solutions was expected to effectively clean particles in high-aspect-ratio (HAR) contact holes.en_US
dc.description.sponsorshipThis research was supported by the program for the development of future semiconductor devices funded by the Ministry of Trade, Industry, and Energy. (MOTIE, South Korea) (Project Number 20004210)en_US
dc.language.isoenen_US
dc.publisherScientific.neten_US
dc.subjectDSP+ solutionsen_US
dc.subjectOrganic removalen_US
dc.subjectParticle removalen_US
dc.subjectIPAen_US
dc.subjectWettabilityen_US
dc.subjectContact angleen_US
dc.subject3D NAND Flashen_US
dc.titleFormulation and Evaluation of Diluted Sulfuric-Peroxide-HF (DSP+) Mixtures for Cleaning High-Aspect Ratio Contacts in 3D NANDen_US
dc.typeArticleen_US
dc.relation.volume314-
dc.identifier.doi10.4028/www.scientific.net/SSP.314.161-
dc.relation.page161-166-
dc.relation.journalSolid State Phenomena-
dc.contributor.googleauthorAn, Kook-Hyun-
dc.contributor.googleauthorKim, Dong-Gyu-
dc.contributor.googleauthorKim, Hyun-Tae-
dc.contributor.googleauthorYerriboina, Nagendra Prasad-
dc.contributor.googleauthorKim, Tae-Gon-
dc.contributor.googleauthorPark, Jin-Goo-
dc.relation.code2021035264-
dc.sector.campusE-
dc.sector.daehakCOLLEGE OF ENGINEERING SCIENCES[E]-
dc.sector.departmentDEPARTMENT OF MATERIALS SCIENCE AND CHEMICAL ENGINEERING-
dc.identifier.pidjgpark-
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COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > MATERIALS SCIENCE AND CHEMICAL ENGINEERING(재료화학공학과) > Articles
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