Selective patterning of out-of-plane piezoelectricity in MoTe2 via focused ion beam
- Title
- Selective patterning of out-of-plane piezoelectricity in MoTe2 via focused ion beam
- Author
- 정문석
- Keywords
- Transition-metal dichalcogenides; Out-of-plane piezoelectricity; Defect formation; Inversion symmetry breaking; Ion beam irradiation
- Issue Date
- 2020-10
- Publisher
- ELSEVIER
- Citation
- NANO ENERGY, v. 79, article no. 105451
- Abstract
- Two-dimensional transition-metal dichalcogenides (TMDs) have a strain-sensitive nature and can only exhibit in plane piezoelectricity, owing to their in-plane inversion symmetry breaking, which limits their practical applications for vertical stimulations. In this study, we demonstrated the capability of focused ion beams to create out of-plane piezoelectricity on multi-layered MoTe2. We utilized a focused helium ion beam to selectively pattern the out-of-plane piezoelectricity via defect engineering in a layered MoTe2 flake. The generated out-of-plane piezoelectricity in the desired area was quantitatively examined using atomic force microscopy, and ion beam irradiation-induced defect formation that gave rise to inversion symmetry breaking was confirmed. These results indicated that the out-of-plane piezoelectricity can be selectively patterned through a focused helium ion beam, and it is expected that this approach can also be applied to other classes of TMDs and can expand the application fields of TMD-based devices.
- URI
- https://www.sciencedirect.com/science/article/pii/S2211285520310260?via%3Dihubhttps://repository.hanyang.ac.kr/handle/20.500.11754/171951
- ISSN
- 2211-2855; 2211-3282
- DOI
- 10.1016/j.nanoen.2020.105451
- Appears in Collections:
- COLLEGE OF NATURAL SCIENCES[S](자연과학대학) > PHYSICS(물리학과) > Articles
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