Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박희준 | - |
dc.date.accessioned | 2022-05-11T01:07:04Z | - |
dc.date.available | 2022-05-11T01:07:04Z | - |
dc.date.issued | 2020-09 | - |
dc.identifier.citation | ACS APPLIED MATERIALS & INTERFACES, v. 12, no. 36, page. 40310-40317 | en_US |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.issn | 1944-8252 | - |
dc.identifier.uri | https://pubs.acs.org/doi/10.1021/acsami.0c09784 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/170744 | - |
dc.description.abstract | In this work, we introduce a bicomponent hole-transport layer, composed of inorganic NiOx and a donor–acceptor–donor (D–A–D)-structured organic small molecule, for p–i–n planar perovskite photovoltaic (PV) cells. The newly designed D–A–D organic hole-transporting material (HTM), (4′,4‴-(1,3,4-oxadiazole-2,5-diyl)bis(N,N-bis(4-methoxyphenyl)-[1,1′-biphenyl]-4-amine)), is shown to be an efficient HTM without a dopant, and methoxy functional units, further introduced to the molecules, are confirmed to be beneficial to passivate the defects in the perovskite, which improves the crystallinity of perovskite and suppresses the nonradiative recombination in the devices, consequently enhancing the performances of PV cells (over 20% efficiency from p–i–n architecture). Furthermore, the decreased defect sites along with the UV-blocking property of the HTM in p–i–n architecture are advantageous in improving the stability of the PV devices. | en_US |
dc.description.sponsorship | This research was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (NRF-2020R1A2C2010342). This work was support by the research fund of Hanyang University (HY-2019). | en_US |
dc.language.iso | en | en_US |
dc.publisher | AMER CHEMICAL SOC | en_US |
dc.subject | perovskite | en_US |
dc.subject | solar cell | en_US |
dc.subject | hole-transport layer | en_US |
dc.subject | bicomponent | en_US |
dc.subject | defect-passivation | en_US |
dc.title | Defect-Passivating Organic/inorganic Bicomponent Hole-Transport Layer for High Efficiency Metal Halide Perovskite Device | en_US |
dc.type | Article | en_US |
dc.relation.no | 36 | - |
dc.relation.volume | 12 | - |
dc.identifier.doi | 10.1021/acsami.0c09784 | - |
dc.relation.page | 40310-40317 | - |
dc.relation.journal | ACS APPLIED MATERIALS & INTERFACES | - |
dc.contributor.googleauthor | Lee, Sewook | - |
dc.contributor.googleauthor | Lee, Jongmin | - |
dc.contributor.googleauthor | Park, Hansol | - |
dc.contributor.googleauthor | Choi, Joonhyuk | - |
dc.contributor.googleauthor | Baac, Hyoung Won | - |
dc.contributor.googleauthor | Park, Sanghyuk | - |
dc.contributor.googleauthor | Park, Hui Joon | - |
dc.relation.code | 2020051325 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ORGANIC AND NANO ENGINEERING | - |
dc.identifier.pid | huijoon | - |
dc.identifier.orcid | https://orcid.org/0000-0003-4607-207X | - |
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