Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 심종인 | - |
dc.date.accessioned | 2022-04-11T04:28:18Z | - |
dc.date.available | 2022-04-11T04:28:18Z | - |
dc.date.issued | 2021-10 | - |
dc.identifier.citation | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE; NOV 19 2021, p2100418 7p. | en_US |
dc.identifier.issn | 18626300 | - |
dc.identifier.issn | 18626319 | - |
dc.identifier.uri | https://onlinelibrary.wiley.com/doi/full/10.1002/pssa.202100418 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/169878 | - |
dc.description.abstract | Three similar-structure InGaN/AlGaN multiple-quantum-well near-ultraviolet (NUV) light-emitting diodes (LEDs) are utilized to investigate the microscopic effect of defects on strain relaxation. Consistent correlations among the crystal quality, the piezoelectric field (FPZ), the internal quantum efficiency (IQE), and the bandgap shrinkage of NUV LEDs are obtained by investigating the macroscopic characterizations. The difference in crystal quality (or the defect density) of NUV LEDs is found by the ideality factor, the emission microscope image, the Shockley–Read–Hall coefficient, and the IQE. Electroreflectance spectra are used to calculate FPZ of NUV LEDs. FPZ, the IQE, and the peak-wavelength shift at driving currents are increased with the samples’ crystal quality compared to the reference sample. Also, FPZ, the IQE, and the peak-wavelength shift are decreased with the increase in samples’ defect densities. A similar result is found for the bandgap shrinkage. This effect significantly indicates that the strain relaxation is induced by defects. Herein, a model that systematically explains the observed changes in macroscopic properties of NUV LEDs is proposed. | en_US |
dc.description.sponsorship | This research was supported by the Korea Evaluation Institute of IndustrialTechnology (20004946, development of light source and frontplane tech-nology for ultra-high resolution pixels over 50k nits), and the NationalResearch Foundation of Korea grant funded by the Korea government(MSIT) (No. 2020M3H4A1A02084899). | en_US |
dc.language.iso | en | en_US |
dc.publisher | WILEY-V C H VERLAG GMBH | en_US |
dc.subject | defects | en_US |
dc.subject | electroreflectance | en_US |
dc.subject | light-emitting diodes | en_US |
dc.subject | piezoelectric field | en_US |
dc.subject | strain relaxation | en_US |
dc.title | Effect of Defects on Strain Relaxation in InGaN/AlGaN Multiple-Quantum-Well Near-Ultraviolet Light-Emitting Diodes | en_US |
dc.type | Article | en_US |
dc.relation.no | 2100418 | - |
dc.identifier.doi | 10.1002/pssa.202100418 | - |
dc.relation.page | 1-7 | - |
dc.relation.journal | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | - |
dc.contributor.googleauthor | Islam, Abu Bashar Mohammad Hamidul | - |
dc.contributor.googleauthor | Shim, Jong-In | - |
dc.contributor.googleauthor | Shin, Dong-Soo | - |
dc.contributor.googleauthor | Kwak, Joon Seop | - |
dc.relation.code | 2021006431 | - |
dc.sector.campus | E | - |
dc.sector.daehak | COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E] | - |
dc.sector.department | DEPARTMENT OF PHOTONICS AND NANOELECTRONICS | - |
dc.identifier.pid | jishim | - |
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