Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박태주 | - |
dc.date.accessioned | 2022-03-08T05:27:29Z | - |
dc.date.available | 2022-03-08T05:27:29Z | - |
dc.date.issued | 2021-08 | - |
dc.identifier.citation | ADVANCED FUNCTIONAL MATERIALS, v. 31, NO 33, Page. 1-10 | en_US |
dc.identifier.issn | 1616301X | - |
dc.identifier.issn | 16163028 | - |
dc.identifier.uri | https://onlinelibrary.wiley.com/doi/full/10.1002/adfm.202102556 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/168922 | - |
dc.description.abstract | Area-selective atomic layer deposition (AS-ALD) offers tremendous advantages in comparison with conventional top-down patterning processes that atomic-level selective deposition can achieve in a bottom-up fashion on pre-defined areas in multi-dimensional structures. In this work, a method for exploiting substrate-dependent selectivity of aminosilane precursors for oxides versus nitrides through chemo-selective adsorption is reported. For this purpose, AS-ALD of SiO2 thin films on SiO2 substrates rather than on SiN substrates are investigated. Theoretical screening using density functional theory (DFT) calculations are performed to identify Si precursors that maximize adsorption selectivity; results indicate that di(isopropylamino)silane (DIPAS) has the potential to function as a highly chemo-selective precursor. Application of this precursor to SiN and SiO2 substrates result in inherent deposition selectivity of ≈4 nm without the aid of surface inhibitors. Furthermore, deposition selectivity is enhanced using an ALD-etch supercycle in which an etching step inserts periodically after a certain number of ALD SiO2 cycles. Thereby, enlarged deposition selectivity greater than ≈10 nm is successfully achieved on both blanket- and SiO2/SiN-patterned substrates. Finally, area-selective SiO2 thin films over 4–5 nm are demonstrated inside 3D nanostructure. This approach for performing inherent AS-ALD expands the potential utility of bottom-up nanofabrication techniques for next-generation nanoelectronic applications. | en_US |
dc.description.sponsorship | J.L. and J.-M.L. contributed equally to this work. This work is the result of a research project supported by SK Hynix Inc. and by the MOTIE (Ministry of Trade, Industry & Energy, No. 20006504) and KSRC (Korea Semiconductor Research Consortium) support program for the development of future semiconductor devices. This work was additionally supported by the research fund of Hanyang University (HY-2020-2472). This work was also supported by the National Supercomputing Center with supercomputing resources including technical support (KSC-2019-CRE-0143). | en_US |
dc.language.iso | en | en_US |
dc.publisher | WILEY-V C H VERLAG GMBH | en_US |
dc.subject | ALD-etch supercycle | en_US |
dc.subject | aminosilane precursor | en_US |
dc.subject | area-selective atomic layer deposition | en_US |
dc.subject | density functional theory | en_US |
dc.subject | enlarged deposition selectivity | en_US |
dc.subject | inherent substrate-dependent selectivity | en_US |
dc.title | Inherently Area-Selective Atomic Layer Deposition of SiO2 Thin Films to Confer Oxide Versus Nitride Selectivity | en_US |
dc.type | Article | en_US |
dc.relation.no | 33 | - |
dc.relation.volume | 31 | - |
dc.identifier.doi | 10.1002/adfm.202102556 | - |
dc.relation.page | 1-10 | - |
dc.relation.journal | ADVANCED FUNCTIONAL MATERIALS | - |
dc.contributor.googleauthor | Lee, Jinseon | - |
dc.contributor.googleauthor | Lee, Jeong-Min | - |
dc.contributor.googleauthor | Oh, Hongjun | - |
dc.contributor.googleauthor | Kim, Changhan | - |
dc.contributor.googleauthor | Kim, Jiseong | - |
dc.contributor.googleauthor | Kim, Dae Hyun | - |
dc.contributor.googleauthor | Shong, Bonggeun | - |
dc.contributor.googleauthor | Park, Tae Joo | - |
dc.contributor.googleauthor | Kim, Woo-Hee | - |
dc.relation.code | 2021003210 | - |
dc.sector.campus | E | - |
dc.sector.daehak | COLLEGE OF ENGINEERING SCIENCES[E] | - |
dc.sector.department | DEPARTMENT OF MATERIALS SCIENCE AND CHEMICAL ENGINEERING | - |
dc.identifier.pid | tjp | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.