Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박재근 | - |
dc.date.accessioned | 2022-03-07T06:40:12Z | - |
dc.date.available | 2022-03-07T06:40:12Z | - |
dc.date.issued | 2020-06 | - |
dc.identifier.citation | AIP ADVANCES, v. 10, no. 6 | en_US |
dc.identifier.issn | 2158-3226 | - |
dc.identifier.uri | https://aip.scitation.org/doi/10.1063/5.0007064 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/168874 | - |
dc.description.abstract | In order to utilize perpendicular spin-torque-transfer magnetic-random-access-memory (p-STT MRAM) as a storage class memory, the achievement of performing multi-level-cell (MLC) operation is important in increasing the integration density of p-STT MRAM. For a double pinned perpendicular magnetic tunneling junction spin-valve performing MLC (i.e., four-resistance level) operation, the uniformity in the resistance difference between four-level resistances was investigated theoretically and experimentally. The uniformity in the resistance difference between four-level resistances was strongly dependent on the top MgO tunneling-barrier thickness. Particularly, the most uniform resistance difference between four resistance states could be achieved at a critical top-MgO tunneling thickness (i.e., similar to 1.15 nm). | en_US |
dc.description.sponsorship | This work was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (Grant No. 2017R1A2A1A05001285) and the Brain Korea 21 PLUS Program in 2014. | en_US |
dc.language.iso | en | en_US |
dc.publisher | AMER INST PHYSICS | en_US |
dc.subject | MAGNETORESISTANCE | en_US |
dc.subject | ANISOTROPY | en_US |
dc.subject | COFEB | en_US |
dc.title | Multi-level resistance uniformity of double pinned perpendicular magnetic-tunnel-junction spin-valve depending on top MgO barrier thickness | en_US |
dc.type | Article | en_US |
dc.relation.no | 6 | - |
dc.relation.volume | 10 | - |
dc.identifier.doi | 10.1063/5.0007064 | - |
dc.relation.page | 65126-65126 | - |
dc.relation.journal | AIP ADVANCES | - |
dc.contributor.googleauthor | Jun, Han-Sol | - |
dc.contributor.googleauthor | Choi, Jin-Young | - |
dc.contributor.googleauthor | Ashiba, Kei | - |
dc.contributor.googleauthor | Jung, Sun-Hwa | - |
dc.contributor.googleauthor | Park, Miri | - |
dc.contributor.googleauthor | Baek, Jong-Ung | - |
dc.contributor.googleauthor | Shim, Tae-Hun | - |
dc.contributor.googleauthor | Park, Jea-Gun | - |
dc.relation.code | 2020045697 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | SCHOOL OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | parkjgl | - |
dc.identifier.orcid | https://orcid.org/0000-0002-5831-2854 | - |
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