Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박재근 | - |
dc.date.accessioned | 2022-02-16T02:28:42Z | - |
dc.date.available | 2022-02-16T02:28:42Z | - |
dc.date.issued | 2020-06 | - |
dc.identifier.citation | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, v. 9, no. 6, article no. 065001 | en_US |
dc.identifier.issn | 2162-8769 | - |
dc.identifier.issn | 2162-8777 | - |
dc.identifier.uri | https://iopscience.iop.org/article/10.1149/2162-8777/ab9fe5 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/167368 | - |
dc.description.abstract | In tungsten(W)-film chemical-mechanical-planarization(CMP), Fenton reaction between ferric-based-catalyst and oxidant hydrogen peroxide (H2O2) enhances the chemical-oxidation degree of the W-film surface and degrades the abrasive stability of a W-film CMP-slurry as a trade-off effect. The addition of a scavenger (i.e., trilithium citrate tetrahydrate: TCT-Li) in the W-film CMP-slurry improved significantly the abrasive stability. A ionized scavenger (i.e., citrate ions) produced a Fe(III)-citrate complex and chemically reacted with the reactive radicals (i.e., OH center dot, HO2 center dot and O-2(center dot-)), depressing Fenton reaction in a ferric-catalyst-based W-film CMP-slurry. Hence, the abrasive stability of the W-film CMP-slurry was improved with the scavenger concentration. In addition, TCT-Li influenced mainly the chemical properties such as the chemical-oxidation degree for the W-film surface and the hydrolysis degree of the SiO2-film surface. Thus, the W-film polishing-rate slightly decreased with the scavenger concentration while the SiO2-film peaked at a specific scavenger concentration (i.e., 0.1-wt%). In addition, two chemical reaction regions were found; i.e., the scavenger-concentration dominant chemical-reaction at the region I (i.e., TCT-Li 0 similar to 0.1 wt%) and the catalyst [ i.e., Fe(NO3)(3)]-concentration dominant chemical-reaction at the region II (i.e., TCT-Li 0.1 similar to 0.3 wt%). The region I showed more strongly a chemical-dominant-reaction than the region II, determining the W- and SiO2-film polishing-rate. | en_US |
dc.description.sponsorship | This work was supported by the Republic of Korea's MOTIE (Ministry of Trade, Industry and Energy) (10085643) and KSRC (Korea Semiconductor Research Consortium) support program for the development of future semiconductor devices, and by the Brain Korea 21 PLUS Program and the Samsung Electronics' University R&D program. | en_US |
dc.language.iso | en | en_US |
dc.publisher | ELECTROCHEMICAL SOC INC | en_US |
dc.subject | AQUEOUS-SOLUTION | en_US |
dc.subject | POLY(ACRYLIC ACID) | en_US |
dc.subject | HYDROGEN-PEROXIDE | en_US |
dc.subject | DEGRADATION | en_US |
dc.subject | COMPLEXES | en_US |
dc.subject | KINETICS | en_US |
dc.subject | SYSTEM | en_US |
dc.subject | CMP | en_US |
dc.title | Influence of Scavenger on Abrasive Stability Enhancement and Chemical and Mechanical Properties for Tungsten-Film Chemical-Mechanical-Planarization | en_US |
dc.type | Article | en_US |
dc.relation.no | 6 | - |
dc.relation.volume | 9 | - |
dc.identifier.doi | 10.1149/2162-8777/ab9fe5 | - |
dc.relation.page | 65001-65001 | - |
dc.relation.journal | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | - |
dc.contributor.googleauthor | Seo, Eun-Bin | - |
dc.contributor.googleauthor | Bae, Jae-Young | - |
dc.contributor.googleauthor | Kim, Sung-In | - |
dc.contributor.googleauthor | Choi, Han-Eol | - |
dc.contributor.googleauthor | Kim, Pilsu | - |
dc.contributor.googleauthor | Lee, Jong-Chan | - |
dc.contributor.googleauthor | Son, Young-Hye | - |
dc.contributor.googleauthor | Yun, Sang-Su | - |
dc.contributor.googleauthor | Park, Jin-Hyung | - |
dc.contributor.googleauthor | Park, Jea-Gun | - |
dc.relation.code | 2020048471 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | SCHOOL OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | parkjgl | - |
dc.identifier.orcid | https://orcid.org/0000-0002-5831-2854 | - |
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