Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 안드레 | - |
dc.date.accessioned | 2021-11-30T01:16:34Z | - |
dc.date.available | 2021-11-30T01:16:34Z | - |
dc.date.issued | 2020-05 | - |
dc.identifier.citation | JOURNAL OF ALLOYS AND COMPOUNDS, v. 822, article no. 153625 | en_US |
dc.identifier.issn | 0925-8388 | - |
dc.identifier.issn | 1873-4669 | - |
dc.identifier.uri | https://www.sciencedirect.com/science/article/pii/S0925838819348716?via%3Dihub | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/166515 | - |
dc.description.abstract | The enhanced resistive switching (RS) characteristics of the flexible TaOx/InGaZnO (IGZO)-based bilayer memristor deposited on the polyethylene terephthalate (PET) substrate are demonstrated in the Ti/TaOx/IGZO/Pt heterostructure. The Ar ion (Ar+) plasma treatment was intentionally induced on the surface of TaOx/IGZO thin films to improve RS filament consistency and results displayed the improved uniform RS behavior of the plasma-treated device. Further, this device is investigated as an artificial electronic synapse and important synaptic functions such as long term potentiation (LTP), long term depression (LTD), paired-pulse facilitation (PPF), post-tetanic potential (PTP) and spike-timing dependent plasticity (STDP) characteristics are well emulated and analogues to the biological synapse behavior. The bending test to assess influence of stress/strain induction on the RS properties is also demonstrated. Further, bulk and angle-resolved x-ray photoelectron spectroscopy (XPS) is utilized to shed a light on the influence of Ar+ plasma on the surface of TaOx/IGZO thin films, as well as AFM analysis, and this insight is argued in the elaborated RS mechanism discussion. | en_US |
dc.description.sponsorship | This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (NRF-2019R1F1A1057243) as well as the Future Semiconductor Device Technology Development Program (20003808 & 20004399) funded by MOTIE (Ministry of Trade, Industry & Energy) and KSRC (Korea Semiconductor Research Consortium) | en_US |
dc.language.iso | en | en_US |
dc.publisher | ELSEVIER SCIENCE SA | en_US |
dc.subject | Ar ions plasma | en_US |
dc.subject | Surface modification | en_US |
dc.subject | Heterostructure thin film | en_US |
dc.subject | Flexible substrate | en_US |
dc.subject | Synapse memristor | en_US |
dc.title | Ar ion plasma surface modification on the heterostructured TaOx/InGaZnO thin films for flexible memristor synapse | en_US |
dc.type | Article | en_US |
dc.relation.volume | 822 | - |
dc.identifier.doi | 10.1016/j.jallcom.2019.153625 | - |
dc.relation.page | 1-11 | - |
dc.relation.journal | JOURNAL OF ALLOYS AND COMPOUNDS | - |
dc.contributor.googleauthor | Sokolov, Andrey S. | - |
dc.contributor.googleauthor | Jeon, Yu-Rim | - |
dc.contributor.googleauthor | Ku, Boncheol | - |
dc.contributor.googleauthor | Choi, Changhwan | - |
dc.relation.code | 2020047954 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | SCHOOL OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | andrey | - |
dc.identifier.researcherID | ABI-7300-2020 | - |
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