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dc.contributor.author한태희-
dc.date.accessioned2021-11-17T05:32:14Z-
dc.date.available2021-11-17T05:32:14Z-
dc.date.issued2020-05-
dc.identifier.citationNANO LETTERS, v. 20, no. 6, page. 4673-4680en_US
dc.identifier.issn1530-6992-
dc.identifier.issn1530-6984-
dc.identifier.urihttps://pubs.acs.org/doi/10.1021/acs.nanolett.0c01550-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/166303-
dc.description.abstractThe present study systematically investigates the morphology and crystallization process of inorganic CsPbBr3 perovskite layer films fabricated by thermal coevaporation in conjunction with continuous low-temperature thermal annealing to promote in situ dynamic thermal crystallization. The results confirm for the first time that both the crystal grain size and the compactness of the CsPbBr3 films can be tuned during the thermal coevaporation fabrication process via in situ dynamic thermal crystallization. The performance of the PeLEDs employing the CsPbBr3 films as the emitter layer is investigated in detail with respect to the substrate temperature and deposition rate employed during deposition of the CsPbBr3 film. This study provides guidelines for developing suitable film production processes and highlights future challenges that must be addressed to facilitate the commercial development of large-area, uniform, and flexible perovskite-based optoelectronic devices.en_US
dc.description.sponsorshipThis study was supported by the National Natural Science Foundation of China (grant nos. 61974054, 61675088, 61275024, and 61377026), the International Science & Technology Cooperation Program of Jilin (grant no. 20190701023GH), the International Science & Technology Cooperation Program of China (grant no. 2014DFG12390), the National Key Research Program of China (grant no. 2016YFB0401001), the Scientific and Technological Developing Scheme of Jilin Province (grants nos. 20140101204JC, 20130206020GX, 20140520071JH, and 20130102009JC), the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (no. 2020R1C1C1008485), and the The Project of Science and Technology Development Plan of Jilin Province (grant no. 20190302011G).en_US
dc.language.isoenen_US
dc.publisherAMER CHEMICAL SOCen_US
dc.subjectIn situ dynamic thermal crystallizationen_US
dc.subjectLow-temperature preparation processen_US
dc.subjectLarge-areaen_US
dc.subjectFlexible Perovskite light-emitting devicesen_US
dc.titleEfficient Flexible Inorganic Perovskite Light-Emitting Diodes Fabricated with CsPbBr3 Emitters Prepared via Low-Temperature in Situ Dynamic Thermal Crystallizationen_US
dc.typeArticleen_US
dc.relation.no6-
dc.relation.volume20-
dc.identifier.doi10.1021/acs.nanolett.0c01550-
dc.relation.page4673-4680-
dc.relation.journalNANO LETTERS-
dc.contributor.googleauthorChen, Chen-
dc.contributor.googleauthorHan, Tae-Hee-
dc.contributor.googleauthorTan, Shaun-
dc.contributor.googleauthorXue, Jingjing-
dc.contributor.googleauthorZhao, Yepin-
dc.contributor.googleauthorLiu, Yunfei-
dc.contributor.googleauthorWang, Haoran-
dc.contributor.googleauthorHu, Wei-
dc.contributor.googleauthorBao, Cong-
dc.contributor.googleauthorMazzeo, Marco-
dc.relation.code2020053284-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentSCHOOL OF MATERIALS SCIENCE AND ENGINEERING-
dc.identifier.pidtaeheehan-
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COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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