Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 최창환 | - |
dc.date.accessioned | 2021-11-16T06:38:58Z | - |
dc.date.available | 2021-11-16T06:38:58Z | - |
dc.date.issued | 2020-05 | - |
dc.identifier.citation | NANOMATERIALS, v. 10, no. 5, article no. 994 | en_US |
dc.identifier.issn | 2079-4991 | - |
dc.identifier.uri | https://www.mdpi.com/2079-4991/10/5/994 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/166287 | - |
dc.description.abstract | Brain-inspired artificial synaptic devices and neurons have the potential for application in future neuromorphic computing as they consume low energy. In this study, the memristive switching characteristics of a nitride-based device with two amorphous layers (SiN/BN) is investigated. We demonstrate the coexistence of filamentary (abrupt) and interface (homogeneous) switching of Ni/SiN/BN/n(++)-Si devices. A better gradual conductance modulation is achieved for interface-type switching as compared with filamentary switching for an artificial synaptic device using appropriate voltage pulse stimulations. The improved classification accuracy for the interface switching (85.6%) is confirmed and compared to the accuracy of the filamentary switching mode (75.1%) by a three-layer neural network (784 x 128 x 10). Furthermore, the spike-timing-dependent plasticity characteristics of the synaptic device are also demonstrated. The results indicate the possibility of achieving an artificial synapse with a bilayer SiN/BN structure. | en_US |
dc.description.sponsorship | This work was supported in part by the National Research Foundation of Korea (NRF), grant funded by the Korean government (MSIP) under Grant 2018R1A2A1A05023517. | en_US |
dc.language.iso | en | en_US |
dc.publisher | MDPI | en_US |
dc.subject | memristor | en_US |
dc.subject | silicon nitride | en_US |
dc.subject | boron nitride | en_US |
dc.subject | neuromorphic computing | en_US |
dc.subject | resistive switching | en_US |
dc.title | Memristive and Synaptic Characteristics of Nitride-Based Heterostructures on Si Substrate | en_US |
dc.type | Article | en_US |
dc.relation.no | 5 | - |
dc.relation.volume | 10 | - |
dc.identifier.doi | 10.3390/nano10050994 | - |
dc.relation.page | 994-1001 | - |
dc.relation.journal | NANOMATERIALS | - |
dc.contributor.googleauthor | Rahmani, Mehr Khalid | - |
dc.contributor.googleauthor | Kim, Min-Hwi | - |
dc.contributor.googleauthor | Hussain, Fayyaz | - |
dc.contributor.googleauthor | Abbas, Yawar | - |
dc.contributor.googleauthor | Ismail, Muhammad | - |
dc.contributor.googleauthor | Hong, Kyungho | - |
dc.contributor.googleauthor | Mahata, Chandreswar | - |
dc.contributor.googleauthor | Choi, Changhwan | - |
dc.contributor.googleauthor | Park, Byung-Gook | - |
dc.contributor.googleauthor | Kim, Sungjun | - |
dc.relation.code | 2020052113 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | SCHOOL OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | cchoi | - |
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