Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 이정호 | - |
dc.date.accessioned | 2021-08-27T06:30:39Z | - |
dc.date.available | 2021-08-27T06:30:39Z | - |
dc.date.issued | 2020-09 | - |
dc.identifier.citation | THIN SOLID FILMS, v. 709, Article no. 138139, 8pp | en_US |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | https://www.sciencedirect.com/science/article/pii/S0040609020303497 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/164653 | - |
dc.description.abstract | The poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) and inverted pyramid n-silicon heterojunction solar cells have been extensively investigated based on their light trapping behaviour, rationally high efficiency and cost effectiveness. However, inferior junction conformity still remains a great challenge. In this work, we present the effect of passivation using aluminium oxide (Al2O3) on the front surface and titanium oxide (TiO2) on rear interface in the inverted pyramid -Si/PEDOT: PSS heterojunction solar cells using the atomic layer deposition technique. The front surface Al2O3 layer can enhance the surface energy, which generates the uniform coating of PEDOT:PSS, acting as an electron blocking layer. Furthermore, TiO2 thin layer deposited on rear interface works as a hole blocking layer, which can suppress the electrical losses and the charge recombination. The best cell demonstrated a conversion efficiency of 16.04% with an open-circuit voltage of 0.63 V, fill factor of 71.5% and a high current density of 35.45 mA/cm(2). These findings suggest a promising approach to attainment of next-generation hybrid solar cells. | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | ELSEVIER SCIENCE SA | en_US |
dc.subject | Si/PEDOT | en_US |
dc.subject | PSS | en_US |
dc.subject | Hybrid solar cells | en_US |
dc.subject | Inverted pyramids | en_US |
dc.subject | Interfacial passivation | en_US |
dc.subject | Atomic layer deposition | en_US |
dc.title | Effect of interfacial passivation on inverted pyramid silicon/poly(3,4-ethylenedioxythiophene):Poly(styrenesulfonate) heterojunction solar cells | en_US |
dc.type | Article | en_US |
dc.relation.volume | 709 | - |
dc.identifier.doi | 10.1016/j.tsf.2020.138139 | - |
dc.relation.page | 1-8 | - |
dc.relation.journal | THIN SOLID FILMS | - |
dc.contributor.googleauthor | Ali, Gohar | - |
dc.contributor.googleauthor | Shinde, Sambhaji S. | - |
dc.contributor.googleauthor | Sami, Abdul | - |
dc.contributor.googleauthor | Kim, Sung–Hae | - |
dc.contributor.googleauthor | Wagh, Nayantara K. | - |
dc.contributor.googleauthor | Lee, Jung-Ho | - |
dc.relation.code | 2020048030 | - |
dc.sector.campus | E | - |
dc.sector.daehak | COLLEGE OF ENGINEERING SCIENCES[E] | - |
dc.sector.department | DEPARTMENT OF MATERIALS SCIENCE AND CHEMICAL ENGINEERING | - |
dc.identifier.pid | jungho | - |
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