174 0

Full metadata record

DC FieldValueLanguage
dc.contributor.author박태주-
dc.date.accessioned2021-08-27T05:48:56Z-
dc.date.available2021-08-27T05:48:56Z-
dc.date.issued2020-04-
dc.identifier.citationJOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, v. 38, no. 1, Article no. 012404, 1, 5ppen_US
dc.identifier.issn1520-8559-
dc.identifier.issn0734-2101-
dc.identifier.urihttps://avs.scitation.org/doi/10.1116/1.5134136-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/164546-
dc.description.abstractAlthough perovskite tin titanate (SnTiO3, STO) has been predicted to have ferroelectricity with a large spontaneous polarization, the implementation of metastable perovskite STO remains a great challenge. In this study, the atomic layer deposition of STO films was attempted using bis(1-dimethylamino-2-methyl-2-propoxy)tin(II) as the Sn source, titanium-tetrakis-isopropoxide as the Ti source, and water as the oxygen source. It was found that during the process, adsorption of both the precursors was enhanced on the heterogeneous reaction surface because of the correlation growth behavior. STO films remained amorphous below 250 °C. Furthermore, although the film was crystallized at 270 °C, the perovskite phase was not identified. Despite the use of the Sn precursor with Sn2+, Sn ions in all the films transformed into Sn4+. Although the postdeposition annealing process in a forming gas atmosphere was conducted for the perovskite conversion, the STO film transformed into Ti5Sn3, an intermetallic compound, at 500 °C.en_US
dc.description.sponsorshipThis work was supported by the National Research Foundation of Korea Grant funded by the Korean government (No. NRF-2018R1A2B2007525) and the Korea Institute of Science and Technology (KIST, No. 2E29400).en_US
dc.language.isoen_USen_US
dc.publisherAVS Science and Technology Societyen_US
dc.titleInvestigation of phases and chemical states of tin titanate films grown by atomic layer depositionen_US
dc.typeArticleen_US
dc.relation.no1-
dc.relation.volume38-
dc.identifier.doi10.1116/1.5134136-
dc.relation.page1-5-
dc.relation.journalJOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-
dc.contributor.googleauthorChung, H.K.-
dc.contributor.googleauthorPyeon, J.J.-
dc.contributor.googleauthorBaek, I.-H.-
dc.contributor.googleauthorKim, S.K.-
dc.contributor.googleauthorPark, T.J.-
dc.contributor.googleauthorLee, G.-Y.-
dc.contributor.googleauthorChung, T.-M.-
dc.contributor.googleauthorLee, H.-
dc.contributor.googleauthorWon, S.O.-
dc.contributor.googleauthorHan, J.H.-
dc.relation.code2020048759-
dc.sector.campusE-
dc.sector.daehakCOLLEGE OF ENGINEERING SCIENCES[E]-
dc.sector.departmentDEPARTMENT OF MATERIALS SCIENCE AND CHEMICAL ENGINEERING-
dc.identifier.pidtjp-
Appears in Collections:
COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > MATERIALS SCIENCE AND CHEMICAL ENGINEERING(재료화학공학과) > Articles
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE