Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박태주 | - |
dc.date.accessioned | 2021-07-27T02:08:31Z | - |
dc.date.available | 2021-07-27T02:08:31Z | - |
dc.date.issued | 2020-01 | - |
dc.identifier.citation | JOURNAL OF ALLOYS AND COMPOUNDS, v. 814, Article no. 152286, 9pp | en_US |
dc.identifier.issn | 0925-8388 | - |
dc.identifier.uri | https://www.sciencedirect.com/science/article/pii/S0925838819335327 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/163244 | - |
dc.description.abstract | The compositional evolution of TiN/SnS2 thin films exposed to post-deposition annealing (PDA) at various O-2 pressures (P(O-2) = 0, 0.1, 1, 2 and 5 Torr) was examined using X-ray absorption spectroscopy (XAS), X-ray photoelectron spectroscopy and transmission electron microscopy. All the results of the analyses showed that the PDA oxidized the hetero-structured films to form SnO2+TiO2 nanocomposites throughout the film, driving out sulfur ions. The chemical and microstructural evolution according to the oxidation was confirmed by TEM and the energy-dispersive spectroscopy analyses. The XAS analysis particularly showed that with increasing P(O-2), the composition of the nanocomposites changed and the microstructure of the titania in the nanocomposites evolved from an anatase to a rutile structure gradually. The conduction band structure also changed in accordance with this microstructural evolution. Electrical measurements on devices with the oxidized SnS2/TiN heterostructure and additional thick TiN metal electrode, further showed that the contact resistance decreased dramatically after the PDA. This implies that the formation of SnO2+TiO2 at the interface between semiconducting SnS2 and metallic TiN can be an effective way to improve the metal-semiconductor contacts. (C) 2019 Elsevier B.V. All rights reserved. | en_US |
dc.description.sponsorship | This work was supported by grants from the National ResearchFoundation of Korea (NRF-2018R1D1A1B07043427 and NRF-2017R1A2B4002842). | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | Elsevier B.V. | en_US |
dc.subject | Nanocomposites | en_US |
dc.subject | Oxidation | en_US |
dc.subject | SnS2 | en_US |
dc.subject | TiN | en_US |
dc.subject | SnO2-TiO2 | en_US |
dc.subject | X-ray absorption spectrosco | en_US |
dc.title | Characterization of oxide nanocomposites formed at annealed TiN/SnS2 heterostructure thin film | en_US |
dc.type | Article | en_US |
dc.relation.volume | 814 | - |
dc.identifier.doi | 10.1016/j.jallcom.2019.152286 | - |
dc.relation.page | 1-9 | - |
dc.relation.journal | JOURNAL OF ALLOYS AND COMPOUNDS | - |
dc.contributor.googleauthor | Mohamed, Ahmed Yousef | - |
dc.contributor.googleauthor | Kim, Dae Hyun | - |
dc.contributor.googleauthor | Lee, Minji | - |
dc.contributor.googleauthor | Park, Tae Joo | - |
dc.contributor.googleauthor | Cho, Deok-Yong | - |
dc.relation.code | 2020047954 | - |
dc.sector.campus | E | - |
dc.sector.daehak | COLLEGE OF ENGINEERING SCIENCES[E] | - |
dc.sector.department | DEPARTMENT OF MATERIALS SCIENCE AND CHEMICAL ENGINEERING | - |
dc.identifier.pid | tjp | - |
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