Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 오재응 | - |
dc.date.accessioned | 2021-07-22T04:43:19Z | - |
dc.date.available | 2021-07-22T04:43:19Z | - |
dc.date.issued | 2000-07 | - |
dc.identifier.citation | IEEE ELECTRON DEVICE LETTERS, v. 21, issue. 7, page. 329-331 | en_US |
dc.identifier.issn | 1558-0563 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | https://ieeexplore.ieee.org/document/847370?arnumber=847370&SID=EBSCO:edseee | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/162992 | - |
dc.description.abstract | A room temperature operation of far-infrared detectors made of self-assembled quantum dots embedded in the channel region of modulation-doped heterostructures is demonstrated. At room temperature, the detector shows a low dark current ranging in the nano-amperes at a bias voltage of 10 V. After the optimization of the separation between the quantum dot region and the 2DEG, a peak responsivity of 5.3 A/W is obtained at 9.0 mu m. The high detectivities of 6 x 10(8) and 5 x 10(10) cmHz(1/2)/W are obtained at room temperature and 80 K, respectively. | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | en_US |
dc.title | Room temperature far infrared photodetectors using self-assembled InAs quantum dots with high detectivity | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/55.847370 | - |
dc.relation.journal | IEEE ELECTRON DEVICE LETTERS | - |
dc.contributor.googleauthor | Kim, Jong-Wook | - |
dc.contributor.googleauthor | Hong, Seong-Chul | - |
dc.contributor.googleauthor | Park, Chung-Hoon | - |
dc.contributor.googleauthor | Yoo, Tae-Kyung | - |
dc.contributor.googleauthor | Oh, Jae-Eung | - |
dc.relation.code | 2009203822 | - |
dc.sector.campus | E | - |
dc.sector.daehak | COLLEGE OF ENGINEERING SCIENCES[E] | - |
dc.sector.department | DIVISION OF ELECTRICAL ENGINEERING | - |
dc.identifier.pid | joh | - |
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