Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 안진호 | - |
dc.date.accessioned | 2021-07-19T06:36:50Z | - |
dc.date.available | 2021-07-19T06:36:50Z | - |
dc.date.issued | 2020-03 | - |
dc.identifier.citation | IEEE ELECTRON DEVICE LETTERS, v. 41, no. 3, page. 361-364 | en_US |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.issn | 1558-0563 | - |
dc.identifier.uri | https://ieeexplore.ieee.org/document/8963681 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/162811 | - |
dc.description.abstract | This work experimentally demonstrates the memory operations of a Z(2)-FET (Zero impact ionization, Zero subthreshold swing) matrix without the use of selectors. Selection and deselection of memory cells in the same bit line can be controlled by modulating the front-gate voltage to prevent the use of a dedicated selector. Appropriate drain voltages to achieve two logic states need to be chosen according to the memory window when the cells are selected. 2D TCAD simulations reveal that the '1'-state current of a deselected cell remains as low as that of the '0'-state since the deselection gate voltage induces higher potential barriers that block the carrier injections from the source and drain. The power consumption for writing and reading the '0'-state are nearly identical for cells with and without selectors. However, at fixed bit line current, the power consumption in any writing and reading is slightly higher with selectors due to their voltage drop. | en_US |
dc.description.sponsorship | This work was supported in part by the REMINDER European Project under Grant 687931, in part by the Korea Institute of Science and Technology (KIST) under Grant 2E29243, in part by the Ministry of Trade, Industry, and Energy (MOTIE) under Grant 10080526, and in part by the Korea Semiconductor Research Consortium (KSRC) Support Program. | en_US |
dc.language.iso | en | en_US |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | en_US |
dc.subject | Memory operation without selectors | en_US |
dc.subject | memory window | en_US |
dc.subject | potential barrier | en_US |
dc.subject | power consumption | en_US |
dc.subject | Z(2)-FET | en_US |
dc.subject | 1T-DRAM | en_US |
dc.title | Memory Operations of Zero Impact Ionization, Zero Subthreshold Swing FET Matrix Without Selectors | en_US |
dc.type | Article | en_US |
dc.relation.no | 3 | - |
dc.relation.volume | 41 | - |
dc.identifier.doi | 10.1109/LED.2020.2967773 | - |
dc.relation.page | 361-364 | - |
dc.relation.journal | IEEE ELECTRON DEVICE LETTERS | - |
dc.contributor.googleauthor | Kwon, S. | - |
dc.contributor.googleauthor | Navarro, C. | - |
dc.contributor.googleauthor | Galy, P. | - |
dc.contributor.googleauthor | Cristoloveanu, S. | - |
dc.contributor.googleauthor | Gamiz, F. | - |
dc.contributor.googleauthor | Ahn, J. | - |
dc.contributor.googleauthor | Kim, Y.-T. | - |
dc.relation.code | 2020051426 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | jhahn | - |
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