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dc.contributor.author김주호-
dc.date.accessioned2021-07-13T01:42:43Z-
dc.date.available2021-07-13T01:42:43Z-
dc.date.issued2020-03-
dc.identifier.citationJOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v. 38, no. 2, article no. 022801en_US
dc.identifier.issn2166-2746-
dc.identifier.urihttps://avs.scitation.org/doi/10.1116/1.5133978-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/162782-
dc.description.abstractIn plasma processing and application, the electron energy distribution function (EEDF) is of fundamental interest because the ion and radical densities related to physical and chemical reactions on the substrate are predominantly governed by the EEDF or electron temperature. In this paper, the effect of low frequency power on the EEDF is investigated when 2 MHz power is added to the plasma originally driven at 13.56 MHz. In a 13.56 MHz operation, the EEDF shows a Maxwellian-like distribution, and as the RF power increases, the electron density increases and the electron temperature decreases. However, when a small amount of 2 MHz power is applied to the 13.56 MHz discharge, the electron density slightly increases and the electron temperature significantly increases. In dual-frequency operation, EEDFs have a low slope of low-energy region and evolve into a Druyvesteyn-like distribution. It turns out that the dual-frequency operation can significantly change the electron temperature. This is consistent with the results calculated using the analytical electron heating model, and the relevant heating mechanism is also presented.en_US
dc.description.sponsorshipThis work was supported by the National Research Foundation of Korea (Nos. NRF-2019M1A7A1A03087579 and NRF-2017R1A2B4009770) and the Ministry of Trade, Industry & Energy (Nos. 10052861 and 10079532).en_US
dc.language.isoenen_US
dc.publisherA V S AMER INST PHYSICSen_US
dc.subjectLARGE-AREAen_US
dc.subjectDISCHARGESen_US
dc.subjectSEPARATIONen_US
dc.subjectRESONANCEen_US
dc.subjectMODELen_US
dc.titleEffect of low frequency power on the electron energy distribution function in argon inductively coupled plasmasen_US
dc.typeArticleen_US
dc.relation.no2-
dc.relation.volume38-
dc.identifier.doi10.1116/1.5133978-
dc.relation.page1-6-
dc.relation.journalJOURNAL OF VACUUM SCIENCE & TECHNOLOGY B-
dc.contributor.googleauthorKim, Ju-Ho-
dc.contributor.googleauthorKwon, Deuk-Chul-
dc.contributor.googleauthorChung, Chin-Wook-
dc.relation.code2020054588-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDIVISION OF ELECTRICAL AND BIOMEDICAL ENGINEERING-
dc.identifier.pidjuhokim-
dc.identifier.orcidhttp://orcid.org/0000-0001-9012-8275-
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRICAL AND BIOMEDICAL ENGINEERING(전기·생체공학부) > Articles
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