Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박관규 | - |
dc.date.accessioned | 2021-05-14T02:20:38Z | - |
dc.date.available | 2021-05-14T02:20:38Z | - |
dc.date.issued | 2020-03 | - |
dc.identifier.citation | IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL, v. 67, no. 4, page. 879-882 | en_US |
dc.identifier.issn | 0885-3010 | - |
dc.identifier.issn | 1525-8955 | - |
dc.identifier.uri | https://ieeexplore.ieee.org/document/8890708 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/162039 | - |
dc.description.abstract | In this letter, we report the characteristics of zero-bias capacitive micromachined ultrasonic transducers (CMUTs) in various aspects, considering the transmission and reception sensitivity and evaluation of the long-term stability with ac transmission in immersion. The main idea of the zero-bias CMUT implementation is that the charge is injected by the dielectric charging effects in an insulation layer in the pull-in state. The CMUT was fabricated by a local oxidation of silicon (LOCOS) process, and the insulation layer consists of Si-3 N-4 -SiO2 and SiO2, which have been commonly used in previous studies. A study on the charging effects is reported to quantitatively observe the voltage shift by charge transfer with time dependence at different temperatures and collapsing time dependence. Therefore, we successfully implemented a zero-bias CMUT with a transmission efficiency of 4.62 kPa/V at a center frequency of 7.53 MHz in Si-3 N-4-SiO2 and a transmission efficiency of 6.78 kPa/V at a center frequency of 7.86 MHz in SiO2 immersion. | en_US |
dc.description.sponsorship | This work was supported by the National Research Foundation of Korea (NRF) Grant funded by the Korea Government (MSIT) under Grant 2018R1A5A7025522 and Grant 2019R1F1A1062162. | en_US |
dc.language.iso | en | en_US |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | en_US |
dc.subject | Capacitive micromachined ultrasonic transducer (CMUT) | en_US |
dc.subject | dielectric charging | en_US |
dc.subject | zero bias | en_US |
dc.title | Comparison of Si3N4-SiO2 and SiO2 Insulation Layer for Zero-Bias CMUT Operation Using Dielectric Charging Effects | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/TUFFC.2019.2950902 | - |
dc.relation.page | 1-4 | - |
dc.relation.journal | IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL | - |
dc.contributor.googleauthor | Choi, Won Young | - |
dc.contributor.googleauthor | Lee, Chang Hoon | - |
dc.contributor.googleauthor | Kim, Young Hun | - |
dc.contributor.googleauthor | Park, Kwan Kyu | - |
dc.relation.code | 2020051424 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MECHANICAL ENGINEERING | - |
dc.identifier.pid | kwankyu | - |
dc.identifier.researcherID | AAC-1269-2021 | - |
dc.identifier.orcid | http://orcid.org/0000-0001-5117-5853 | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.