Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 정예환 | - |
dc.date.accessioned | 2021-03-18T05:16:40Z | - |
dc.date.available | 2021-03-18T05:16:40Z | - |
dc.date.issued | 2019-02 | - |
dc.identifier.citation | NEW JOURNAL OF PHYSICS, v. 21, article no. 023011 | en_US |
dc.identifier.issn | 1367-2630 | - |
dc.identifier.uri | https://iopscience.iop.org/article/10.1088/1367-2630/ab0445 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/160665 | - |
dc.description.abstract | The ineffective p-type doping of nitrides using magnesium (Mg), the best available dopant, has limited the development and performance of all III-nitride-based devices, including bipolar junction transistors and light emitting diodes (LEDs). For nitride-based ultraviolet (UV) LEDs, as the Al composition increases for achieving shorter wavelengths (e.g. <280 nm) into the UVC spectral range, the p-type doping issue, which causes very inefficient hole injection, becomes more severe than ever. In this work, we report the detailed study of using p-type Si as a hole supplier for high-Al composition UVC LEDs. We first describe the method of Si/GaN junction formation, where the lattice-mismatch challenge between Si and GaN is overcome by using a 0.5 nm thick Al2O3 layer at the interface. This serves as a physical separation layer between the two materials as well as a passivation, tunneling, and thermal buffer layer. High-resolution transmission electron microscope image illustrates the high-quality interface between Si and GaN. We further detail the hole transport mechanism of the p-p Si/GaN isotype junction through both simulations and experiments. The enhanced hole concentration in the AlGaN/AlN multiple quantum wells (MQWs) due to the use of p-type Si as the hole supplier is verified through comparison with conventional UVC LEDs. Finally, high-performance UVC LEDs made with AlN/AlGaN (Al: 72%) MQWs employing p-type Si as their hole suppliers are demonstrated experimentally to serve as an example of the novel hole injector strategy. | en_US |
dc.description.sponsorship | The work was supported by Defense Advanced Research Projects Agency (DARPA) under Grant HR0011-15-2-0002 (PMs: Dr Daniel Green and Dr Young-Kai Chen). | en_US |
dc.language.iso | en | en_US |
dc.publisher | IOP PUBLISHING LTD | en_US |
dc.subject | tunneling | en_US |
dc.subject | single crystal nanomembrane | en_US |
dc.subject | atomic layer deposition | en_US |
dc.subject | transfer printing | en_US |
dc.subject | hole injector | en_US |
dc.subject | light emitting diodes | en_US |
dc.title | P-type silicon as hole supplier for nitride-based UVC LEDs | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1088/1367-2630/ab0445 | - |
dc.relation.journal | NEW JOURNAL OF PHYSICS | - |
dc.contributor.googleauthor | Cho, Sang June | - |
dc.contributor.googleauthor | Liu, Dong | - |
dc.contributor.googleauthor | Seo, Jung-Hun | - |
dc.contributor.googleauthor | Dalmau, Rafael | - |
dc.contributor.googleauthor | Kim, Kwangeun | - |
dc.contributor.googleauthor | Park, Jeongpil | - |
dc.contributor.googleauthor | Gong, Jiarui | - |
dc.contributor.googleauthor | Zhao, Deyin | - |
dc.contributor.googleauthor | Wang, Fei | - |
dc.contributor.googleauthor | Jung, Yei Hwan | - |
dc.relation.code | 2019003236 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | yjung | - |
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