Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 김희준 | - |
dc.date.accessioned | 2021-03-09T06:29:57Z | - |
dc.date.available | 2021-03-09T06:29:57Z | - |
dc.date.issued | 2001-07 | - |
dc.identifier.citation | IEEE TRANSACTIONS ON MAGNETICS, v. 37, issue. 4, page. 2291-2293 | en_US |
dc.identifier.issn | 0018-9464 | - |
dc.identifier.uri | https://ieeexplore.ieee.org/document/951151?arnumber=951151&SID=EBSCO:edseee | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/160376 | - |
dc.description.abstract | We investigated the magnetic properties of as-sputtered FeTaN films as a function of deposition temperature and composition. At the deposition temperature higher than 200 °C, both soft magnetism and magnetic moments can be fully achieved. While the Ta and N contents in the films affect the magnetic properties, the N content exhibits stronger effects. The magnetic properties are affected by the film microstructures via. crystallinity, grain size, and formation of FexN phases. An excessive N incorporation into the films causes incomplete crystallization and/or formation of Fe3N phases in the as-deposited state, leading to a poor soft magnetic property. As-deposited FeTaN film at the optimum composition of Fe91.7Ta4.2N4.1 gives the best soft magnetic properties; coercivity of ∼2 Oe and permeability of ∼1600 stable up to the frequency of 100 MHz. | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | en_US |
dc.subject | FeTaN | en_US |
dc.subject | soft magnetism | en_US |
dc.subject | substrate heating | en_US |
dc.title | Effects of Substrate Temperature on the Magnetics of As-Sputtered FeTaN films | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/20.951151 | - |
dc.relation.journal | IEEE TRANSACTIONS ON MAGNETICS | - |
dc.contributor.googleauthor | Bae, Seek | - |
dc.contributor.googleauthor | Kim, Choong-Sik | - |
dc.contributor.googleauthor | Jeong, Jong-Han | - |
dc.contributor.googleauthor | Ryu, Sung-Ryong | - |
dc.contributor.googleauthor | Kim, Hee-Jun | - |
dc.contributor.googleauthor | Nam, Seoung-Eui | - |
dc.contributor.googleauthor | Kim, Hyoung-June | - |
dc.relation.code | 2009203879 | - |
dc.sector.campus | E | - |
dc.sector.daehak | COLLEGE OF ENGINEERING SCIENCES[E] | - |
dc.sector.department | DIVISION OF ELECTRICAL ENGINEERING | - |
dc.identifier.pid | hjkim | - |
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