A Study on the Development of Low Temperature Process Stretchable Hybrid Thin Film Transistor

Abstract

In this study, the super lattice consist of ZnO and 4MP(4-mercaptophenol) deposited as channel at a relatively low temperature of 110℃,aiming to enhance the stretchability of channel and ensure the high electric performance. The insulating layer is deposited with spin-coating which is consist of network structure modification-enabled hybrid polymer to enhance the stretchability of gate insulating layer on the base of high electrical performance. It can be shown that the current density of MIM capacitors with double layer hybrid insulator is less than 10-8A/cm2 at the dielectric field of 1MV/cm and their breakdown filed were more than 5MV/cm. The relative dielectric constant for the capacitors with ZrTA-PcP-ZrOx dielectric layer was approximately 4.2. The super lattice transistor with organic-inorganic hybrid dielectric layer exhibited the mobility of 1.1cm2/Vs ,SS of 1.5 V/decade, threshold voltage of -0.8V and Ion/off ratio of 5.3×104 even at low processing temperate of 150℃.Also, after 100 stretchability test cycles under uniaxial elongation of approximately 350%, the super lattice transistor still remains a carrier mobility of 1.0 cm2/Vs, a sub-threshold gate swing of 1.7 V/decade and Ion/off ratio of 4.8×104