Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박진석 | - |
dc.date.accessioned | 2020-11-11T07:09:57Z | - |
dc.date.available | 2020-11-11T07:09:57Z | - |
dc.date.issued | 2004-01 | - |
dc.identifier.citation | Thin Solid Films, v. 447-448, page. 231-238 | en_US |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | https://www.sciencedirect.com/science/article/pii/S0040609003010988 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/155432 | - |
dc.description.abstract | The growth of highly oriented diamond is performed on Si (111) and 6H–SiC (0001) substrates via two-step and three-step processes using microwave plasma CVD. The two-step process involves bias-enhanced nucleation (BEN) and deposition, and the three-step process involves carburization in addition to the two-step process. The diamond films grown on the Si (111) substrate exhibit high quality and desirable (111)-orientation under the carburization condition of 5.3×103 Pa in pressure with no bias applied. The mechanism for the formation of conversion layer during the carburization step is investigated on both the substrates through the Raman and X-ray photoelectron spectroscopy (XPS) studies. The results indicate that the carburization mainly composed of β-SiC, which plays a crucial role for the formation of the conversion layer and which eventually promotes the diamond nucleation. It is also suggested that a highly-oriented and high-quality diamond film can be successfully achieved by carburization. | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | Elsevier B.V. | en_US |
dc.subject | Highly-oriented diamond | en_US |
dc.subject | Si (111) | en_US |
dc.subject | 6H–SiC (0001) | en_US |
dc.subject | Carburization | en_US |
dc.subject | Bias-enhanced | en_US |
dc.subject | nucleation | en_US |
dc.subject | β-SiC layer | en_US |
dc.subject | Raman | en_US |
dc.subject | XPS | en_US |
dc.subject | XRD | en_US |
dc.title | Growth of highly-oriented diamond films on 6H-SiC(0001) and Si(111) substrates and the effects of carburization | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1016/S0040-6090(03)01098-8 | - |
dc.contributor.googleauthor | Lee, Tae-Hoon | - |
dc.contributor.googleauthor | Seo, Soo-Hyung | - |
dc.contributor.googleauthor | Kang, Seung-Min | - |
dc.contributor.googleauthor | Park, Jin-Seok | - |
dc.sector.campus | E | - |
dc.sector.daehak | COLLEGE OF ENGINEERING SCIENCES[E] | - |
dc.sector.department | DIVISION OF ELECTRICAL ENGINEERING | - |
dc.identifier.pid | jinsp | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.