Repository at Hanyang UniversityCOLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학)PHOTONICS AND NANOELECTRONICS(나노광전자학과)Articles
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dc.contributor.author심종인-
dc.date.accessioned2020-10-26T05:50:00Z-
dc.date.available2020-10-26T05:50:00Z-
dc.date.issued2003-02-
dc.identifier.citation한국광학회 제14회 정기총회 및 2003년도 동계학술발표회 논문집, Page.148-149en_US
dc.identifier.urihttp://www.dbpia.co.kr/journal/articleDetail?nodeId=NODE00649356-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/154909-
dc.description.abstractThe parasitic effects due to the current blocking layer limit the bandwidth of the semiconductor laser diode. Thus, the parasitic response of various blocking layers was analyzed. The inin type was the best choice for the leakage current reduction and the bandwidth expansion.en_US
dc.language.isoko_KRen_US
dc.publisherOptical Society of Koreaen_US
dc.title전류차단층의 기생효과 해석en_US
dc.typeArticleen_US
dc.contributor.googleauthor김동철-
dc.contributor.googleauthor심종인-
dc.contributor.googleauthor어영선-
dc.contributor.googleauthor박문규-
dc.contributor.googleauthor강중구-
dc.contributor.googleauthor계용찬-
dc.contributor.googleauthor장동훈-
dc.sector.campusE-
dc.sector.daehakCOLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E]-
dc.sector.departmentDEPARTMENT OF PHOTONICS AND NANOELECTRONICS-
dc.identifier.pidjishim-
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