Lithography Process Optimization Simulator for an Illumination System
- Title
- Lithography Process Optimization Simulator for an Illumination System
- Author
- 안일신
- Keywords
- Optical proximity correction(OPC); Illumination condition; Critical dimension(CD)
- Issue Date
- 2003-02
- Publisher
- KOREAN PHYSICAL SOC(한국물리학회)
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.42, No.3, Page.276-279
- Abstract
- Resolution enhancement technology and optical proximity correction
are widely used in a lithography process in order to overcome the
resolution limit for the best lithography performance. Among the
many lithographic parameters, numerical aperture, illumination
type, and partial coherence most strongly influence the optimum
result. Since these three elements give different results in
different combinations, it is important to find the best
illumination condition. However, illumination combination cannot
improve all lithographic results simultaneously. For example, the
resolution-improving combination that is best only for a dense
pattern can amplify the proximity effect. In this paper, the
tendency of photo results dependent on the change of illumination
is shown in one simple plot, so that the optimized optical system
conditions can be easily obtained for the best results of critical
dimension uniformity. Our work will give quick, good process
conditions that can be easily applied in a device manufacturing
environment by a lithography engineer. This paper discusses the
use of simulation to determine the optimum lithographic parameters
for any arbitrary patterns.
- URI
- https://www.kci.go.kr/kciportal/ci/sereArticleSearch/ciSereArtiView.kci?sereArticleSearchBean.artiId=ART000989993https://repository.hanyang.ac.kr/handle/20.500.11754/154896
- ISSN
- 0374-4884
- Appears in Collections:
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > PHOTONICS AND NANOELECTRONICS(나노광전자학과) > Articles
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