Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 한태희 | - |
dc.date.accessioned | 2020-09-03T07:25:06Z | - |
dc.date.available | 2020-09-03T07:25:06Z | - |
dc.date.issued | 2019-08 | - |
dc.identifier.citation | NANOSCALE, v. 11, no. 29, Page. 13815-13823 | en_US |
dc.identifier.issn | 2040-3364 | - |
dc.identifier.issn | 2040-3372 | - |
dc.identifier.uri | https://pubs.rsc.org/en/content/articlelanding/2019/NR/C9NR03465J#!divAbstract | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/153539 | - |
dc.description.abstract | We synthesized two different nanostructures of rutile TiO2 (r-TiO2) thin films on a fluorine-doped tin oxide (FTO) substrate at the lowest temperature reported until now and fabricated resistive random access memory (RRAM) devices with these r-TiO2 thin films having the stacking sequence of Ag/r-TiO2/FTO. Complementary resistive switching (CRS) and bipolar resistive switching (BRS) were observed in different thicknesses of r-TiO2 based devices. Benefiting from the in situ growth of the solution processed thin films and modulating the reaction growth rates, we successfully attained two different morphologies of r-TiO2 with a nanoplateau at a controlled deposition rate and pre-defined nanochannels at a higher deposition rate. The RRAM devices with nano-plateaus of r-TiO2 showed excellent CRS as well as unprecedented simultaneous observations of BRS. These CRS and BRS characteristics were reversible and reproducible. On the other hand, the tailored pre-defined nanochannels in r-TiO2 led to forming-free BRS with a pulse endurance higher than 10(7) without any degradation in the high and low resistance states. We propose a plausible switching mechanism of these unprecedented events using various physical and electrical characterization studies of low-temperature processed r-TiO2 RRAM devices. This work suggests the importance of solution-processed thin film engineering for RRAM switching with reliable and reproducible characteristics. | en_US |
dc.description.sponsorship | This research was supported by the Nano Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of science, ICT & Future Planning (NRF-2016M3A7B4910426) as well as by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (NRF-2016R1A6A1A03013422 and 2017R1A2B4010771). | en_US |
dc.language.iso | en | en_US |
dc.publisher | ROYAL SOC CHEMISTRY | en_US |
dc.subject | NONVOLATILE RESISTIVE MEMORY | en_US |
dc.subject | MECHANISM | en_US |
dc.subject | DEVICES | en_US |
dc.subject | TRANSITION | en_US |
dc.subject | BEHAVIORS | en_US |
dc.subject | GROWTH | en_US |
dc.subject | TAOX | en_US |
dc.subject | RRAM | en_US |
dc.title | Tailored nanoplateau and nanochannel structures using solution-processed rutile TiO2 thin films for complementary and bipolar switching characteristics | en_US |
dc.type | Article | en_US |
dc.relation.no | 29 | - |
dc.relation.volume | 11 | - |
dc.identifier.doi | 10.1039/c9nr03465j | - |
dc.relation.page | 13815-13823 | - |
dc.relation.journal | NANOSCALE | - |
dc.contributor.googleauthor | Abbas, Yawar | - |
dc.contributor.googleauthor | Ambade, Rohan B. | - |
dc.contributor.googleauthor | Ambade, Swapnil B. | - |
dc.contributor.googleauthor | Han, Tae Hee | - |
dc.contributor.googleauthor | Choi, Changhwan | - |
dc.relation.code | 2019001557 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ORGANIC AND NANO ENGINEERING | - |
dc.identifier.pid | than | - |
dc.identifier.researcherID | E-8590-2015 | - |
dc.identifier.orcid | https://orcid.org/0000-0001-5950-7103 | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.