SeTeZn Chalcogenide Materials-based Threshold Switching Characteristics

Abstract

Due to the ongoing development in higher density memory technologies, passive crossbar within the structure an array of nonvolatile memory and selector devices are critical components. However, the current existing selector devices have been yet fulfilled all the performance requirements required to implement the selector device. The ovonic threshold switching (OTS) device is one of the promising candidates proposed as 3D stackable device composed of chalcogenide material.

In this work, a novel material based Ovonic Threshold Switching (OTS) selector device is introduced. Switching layer is consist of SeTeZn ternary system. We address the advanced features of SeTeZn chalcogenide material-based selectors ensuring the bidirectional threshold switching behavior, non-linearity of 10³ and switching endurance of more than 10⁴. In addition, thermal characteristics of SeTeZn selectors are clearly identified up to 250℃.