Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 설원제 | - |
dc.date.accessioned | 2020-08-06T07:43:26Z | - |
dc.date.available | 2020-08-06T07:43:26Z | - |
dc.date.issued | 2019-10 | - |
dc.identifier.citation | NANOTECHNOLOGY, v. 30, no. 40, article no. 405707 | en_US |
dc.identifier.issn | 0957-4484 | - |
dc.identifier.issn | 1361-6528 | - |
dc.identifier.uri | https://iopscience.iop.org/article/10.1088/1361-6528/ab2d89 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/152091 | - |
dc.description.abstract | In this work, we report on the layered deposition of few-layer tin disulfide (SnS2) using atomic layer deposition (ALD). By varying the ALD cycles it was possible to deposit poly-crystalline SnS2 with small variation in layer numbers. Based on the ALD technique, we developed the process technology growing few-layer crystalline SnS2 film (3–6 layers) and we investigated their electrical properties by fabricating bottom-gated thin film transistors using the ALD SnS2 as the transport channel. SnS2 devices showed typical n-type characteristic with on/off current ratio of ~8.32 × 106, threshold voltage of ~2 V, and a subthreshold swing value of 830 mV decade−1 for the 6 layers SnS2. The developed SnS2 ALD technique may aid the realization of two-dimensional SnS2 based flexible and wearable devices. | en_US |
dc.description.sponsorship | This work was supported by Nano Material Technology Development Program (2014M3A7B4049367 and 2014M3A7B4049369) through the National Research Foundation (NRF) of Korea funded by the Ministry of Science and ICT(MSIT), Korea. | en_US |
dc.language.iso | en | en_US |
dc.publisher | IOP PUBLISHING LTD | en_US |
dc.subject | tin disulfide | en_US |
dc.subject | post-transition metal dichalcogenides | en_US |
dc.subject | two-dimensional materials | en_US |
dc.subject | atomic layer deposition | en_US |
dc.subject | field effect transistor | en_US |
dc.title | Layered deposition of SnS2 grown by atomic layer deposition and its transport properties | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1088/1361-6528/ab2d89 | - |
dc.relation.page | 405707-405707 | - |
dc.relation.journal | NANOTECHNOLOGY | - |
dc.contributor.googleauthor | Lee, Namgue | - |
dc.contributor.googleauthor | Lee, Gunwoo | - |
dc.contributor.googleauthor | Choi, Hyeongsu | - |
dc.contributor.googleauthor | Park, Hyunwoo | - |
dc.contributor.googleauthor | Choi, Yeonsik | - |
dc.contributor.googleauthor | Seo, Hojun | - |
dc.contributor.googleauthor | Ju, HyoungBeen | - |
dc.contributor.googleauthor | Kim, Sunjin | - |
dc.contributor.googleauthor | Sul, Onejae | - |
dc.contributor.googleauthor | Lee, Jeongsu | - |
dc.relation.code | 2019001118 | - |
dc.sector.campus | S | - |
dc.sector.daehak | RESEARCH INSTITUTE[S] | - |
dc.sector.department | INSTITUTE OF NANO SCIENCE AND TECHNOLOGY | - |
dc.identifier.pid | ojsul | - |
dc.identifier.orcid | https://orcid.org/0000-0003-4151-9848 | - |
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