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dc.contributor.author권오경-
dc.date.accessioned2020-07-24T06:24:54Z-
dc.date.available2020-07-24T06:24:54Z-
dc.date.issued2019-06-
dc.identifier.citationJOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v. 19, no. 3, Page. 254-259en_US
dc.identifier.issn1598-1657-
dc.identifier.issn2233-4866-
dc.identifier.urihttp://www.dbpia.co.kr/journal/articleDetail?nodeId=NODE08746099&language=ko_KR-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/151885-
dc.description.abstractA fast transient and low power capacitor-less low-dropout (LDO) regulator is proposed for power management in wearable applications. The proposed LDO regulator employs an advanced dynamic biasing (ADB) method, which detects the load transient without using external components including the large resistor and capacitor, and dynamically adjusts the bias current according to the load current (I-LOAD). In this way, it maintains the bias current low at steady state and increases it only during load transients, thus achieving a fast transient response while maintaining a low power consumption. The proposed LDO regulator was fabricated using a 0.18-mu m CMOS process and occupied a chip area of 0.05 mm(2). The measurement results showed that the proposed LDO regulator achieved an output voltage settling time of less than 1.2 mu s when I-LOAD changes from 100 mA to 100 mu A. In addition, the measured quiescent current was 2.0 mu A at light load. Therefore, the proposed LDO regulator is suitable for wearable applications requiring fast transient response and low power consumption.en_US
dc.language.isoenen_US
dc.publisherIEEK PUBLICATION CENTERen_US
dc.subjectDynamic biasingen_US
dc.subjectfast transient responseen_US
dc.subjectoutput capacitor-lessen_US
dc.subjectlow-dropout regulatoren_US
dc.subjectlow-quiescent currenten_US
dc.titleA Fast Transient and Low Power Capacitor-less Low-dropout Regulator using Advanced Dynamic Biasing Methoden_US
dc.typeArticleen_US
dc.relation.no3-
dc.relation.volume19-
dc.identifier.doi10.5573/JSTS.2019.19.3.254-
dc.relation.page254-259-
dc.relation.journalJOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE-
dc.contributor.googleauthorJung, Jae-Hoon-
dc.contributor.googleauthorJung, Jae-Hyung-
dc.contributor.googleauthorJung, Young-Ho-
dc.contributor.googleauthorJeong, Hoe-Eung-
dc.contributor.googleauthorHong, Seong-Kwan-
dc.contributor.googleauthorKwon, Oh-Kyong-
dc.relation.code2019038164-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDEPARTMENT OF ELECTRONIC ENGINEERING-
dc.identifier.pidokwon-
dc.identifier.researcherIDAAE-8952-2020-
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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