Luminescence Characteristics of Sr3MgSi2O8:Eu Blue Phosphor for Light Emitting Diodes

Abstract

We have synthesized a Eu2+ -activated Sr3MgSi 2O8 blue phosphor and investigated an attempt to develop blue light-emitting diodes (LEDs) by combining it with an InGaN blue LED chip (λem = 405 nm). The InGaN-based Sr3MgSi 2O8:Eu LED lamp shows two bands at 405 and 460 nm. The 405 nm emission band is due to a radiative recombination from a InGaN active layer. This 405 nm emission was used as an optical pump for the excitation of the Sr3MgSi2O8:Eu phosphor. The 460 nm emission band is ascribed to a radiative recombination of Eu2+ impurity ions in the Sr3MgSi2O8 host matrix.