Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 최창환 | - |
dc.date.accessioned | 2020-07-16T06:18:00Z | - |
dc.date.available | 2020-07-16T06:18:00Z | - |
dc.date.issued | 2019-07 | - |
dc.identifier.citation | ACS APPLIED MATERIALS & INTERFACES, v. 11, no. 26, Page. 23329-23336 | en_US |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.issn | 1944-8252 | - |
dc.identifier.uri | https://pubs.acs.org/doi/10.1021/acsami.9b05384 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/151760 | - |
dc.description.abstract | We report the dependence of the thickness of amorphous boron nitride (a-BN) on the characteristics of conductive bridge random access memory (CBRAM) structured with the Ag/a-BN/Pt stacking sequence. The a-BN thin film layers of three different thicknesses of 5.5, 11, and 21.5 nm were prepared by the sputtering deposition. Depending on the thickness of the a-BN layer, the devices are found to be in either low-resistance state (LRS) or high-resistance state (HRS) prior to any consecutive switching cycle. All devices with 5.5 nm thick a-BN switching layer are in LRS as the pristine state, while devices with 21.5 nm thick a-BN layer are found to be in HRS as the pristine state. To attain reliable switching cycles, initial RESET and electroforming process are necessarily required for the devices with 5.5 and 21.5 nm thick a-BN layer, respectively. However, the devices with the a-BN layer of thickness between 5.5 and 21.5 nm in pristine states are in either HRS or LRS. This dependence of the a-BN thickness on different resistance states in the pristine state can be explained by in situ Ag diffusion during its sputter deposition to form a top electrode on the a-BN layer. Our finding shows a detailed investigation and a deep understanding of the switching mechanism of Ag/a-BN/Pt CBRAM devices with respect to different a-BN thicknesses for the future computing system. | en_US |
dc.description.sponsorship | This research was supported by the Nano Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of science, ICT & Future Planning (NRF-2016M3A7B4910426) as well as the Future Semiconductor Device Technology Development Program (10080689) funded by MOTIE (Ministry of Trade, Industry & Energy) and KSRC (Korea Semiconductor Research Consortium). The authors appreciate the measurement of humidity on the RS behaviors of the device to Dr Gul Hassan. | en_US |
dc.language.iso | en | en_US |
dc.publisher | AMER CHEMICAL SOC | en_US |
dc.subject | amorphous BN | en_US |
dc.subject | Ag diffusion | en_US |
dc.subject | resistive switching | en_US |
dc.subject | CBRAM | en_US |
dc.subject | conductive filament | en_US |
dc.title | Study of in Situ Silver Migration in Amorphous Boron Nitride CBRAM Device | en_US |
dc.type | Article | en_US |
dc.relation.no | 26 | - |
dc.relation.volume | 11 | - |
dc.identifier.doi | 10.1021/acsami.9b05384 | - |
dc.relation.page | 23329-23336 | - |
dc.relation.journal | ACS APPLIED MATERIALS & INTERFACES | - |
dc.contributor.googleauthor | Jeon, Yu-Rim | - |
dc.contributor.googleauthor | Abbas, Yawar | - |
dc.contributor.googleauthor | Sokolov, Andrey Sergeevich | - |
dc.contributor.googleauthor | Kim, Sohyeon | - |
dc.contributor.googleauthor | Ku, Boncheol | - |
dc.contributor.googleauthor | Choi, Changhwan | - |
dc.relation.code | 2019002549 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | cchoi | - |
dc.identifier.orcid | https://orcid.org/0000-0002-8386-3885 | - |
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