Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 김상태 | - |
dc.date.accessioned | 2020-06-08T05:31:29Z | - |
dc.date.available | 2020-06-08T05:31:29Z | - |
dc.date.issued | 2019-04 | - |
dc.identifier.citation | JOURNAL OF PHYSICS D-APPLIED PHYSICS, v. 52, no. 15, article no. 155101 | en_US |
dc.identifier.issn | 0022-3727 | - |
dc.identifier.issn | 1361-6463 | - |
dc.identifier.uri | https://iopscience.iop.org/article/10.1088/1361-6463/ab014e | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/151510 | - |
dc.description.abstract | While the properties of the non-(100) Ge surface become more important with the scaling down of Ge-based transistor devices, the stability and electronic properties of the interface between non-(100) Ge and amorphous GeO2 (a-GeO2) compared to those of Ge(100) and a-GeO2 are still not well known. In this study, first-principles calculations were performed to systematically study the atomic and electronic structures of Ge/a-GeO2 interfaces with various surface orientations of Ge. The study shows that the Ge(111)/a-GeO2 and Ge(100)/a-GeO2 interfaces have the lowest and highest interface energies, respectively. The stability of the Ge/a-GeO2 interface is governed by the interfacial bond density and the minimization of the dangling bonds. We find that the interface region, composed of the Ge suboxides, dominates the electronic structures of the Ge/a-GeO2. The Ge atoms with uncompensated dangling bonds result in various trap states within the band gap of Ge, which is related to the charge neutrality level of the Ge defect. The band offsets between Ge and a-GeO2 show little dependence on the original Ge orientation. | en_US |
dc.description.sponsorship | This work was supported by the Future Semiconductor Device Technology Development Program (10048490) funded by MOTIE (Ministry of Trade, Industry, & Energy) and KSRC (Korea Semiconductor Research Consortium), and by the Institutional Research Program of KIST (Korea Institute of Science and Technology) (2E29390). S K was partly supported by the Institutional Research Program of KIST (2E29400). J-H C was partly supported by the National Research Foundation of Korea (NRF) for convergent research in Development program for convergence R&D over traditional culture and current technology (NRF-2016M3C1B5906481). The authors would also like to acknowledge the support of KISTI Super-computing Center through the Strategic Support Program for Supercomputing Application Research (KSC-2014-C2-042 and KSC-2015-C2-025). | en_US |
dc.language.iso | en | en_US |
dc.publisher | IOP PUBLISHING LTD | en_US |
dc.subject | Ge/a-GeO2 interface layer | en_US |
dc.subject | Ge orientation dependence | en_US |
dc.subject | structural properties | en_US |
dc.subject | electronic properties | en_US |
dc.subject | first-principle study | en_US |
dc.title | Orientation-dependent structural and electronic properties of Ge/a-GeO2 interfaces: first-principles study | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1088/1361-6463/ab014e | - |
dc.relation.journal | JOURNAL OF PHYSICS D-APPLIED PHYSICS | - |
dc.contributor.googleauthor | Liu, Kai | - |
dc.contributor.googleauthor | Ko, Eunjung | - |
dc.contributor.googleauthor | Kim, Sangtae | - |
dc.contributor.googleauthor | Park, Jaehong | - |
dc.contributor.googleauthor | Hwang, Cheol Seong | - |
dc.contributor.googleauthor | Choi, Jung-Hae | - |
dc.relation.code | 2019002286 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF NUCLEAR ENGINEERING | - |
dc.identifier.pid | sangtae | - |
dc.identifier.orcid | https://orcid.org/0000-0002-7959-8249 | - |
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