화학기상증착용 티타늄화합물 전구체의 합성 및 열적 특성에 관한연구

Abstract

Thin films of titanium oxide for microelectronics applications can be deposited by MOCVD using direct injection of the Asymmetric titanium precursors. The compound [Ti(thd)2(OPri)Cl] (where Hthd=2,2,6,6-tetramethyl-3,5-heptanedione) was synthesized by the reaction of [Ti(thd)2(OPri)2] with MEM-Cl (where MEM-Cl=2-methoxyethoxymethyl chloride) in n-hexane. And the asymmetric compounds [Ti(thd)2(OPri)(OR)] (where R=Me , Et , t-Bu ) were synthesized by the simple ligand exchange reaction of the compound [Ti(thd)2(OPri)Cl] with potassium alkoxide in n-hexane. They have been thermally characterized and discussed by the thermal gravimetric analysis. Titanium Oxide thin films were grown by MOCVD at temperatures, ranging for 350 ℃ to 400 ℃. Titanium oxide thin films have been Characterization by the XRD, SEM, AES. These include TiO2 High-k dielectric layers or TiN with NH3 reactant gas for DRAM application.