산화막 연마공정에서 초기단차제거 특성을 가진 세리아 슬러리

Abstract

In this work, we focus on the influence of ceria-based slurries’ concentration in planarization capability and the application of the low concentration to alternate current ceria and silica slurry. When the concentration of abrasive goes down, the polishing ability decreases dramatically. The polishing with small amount of ceria abrasive have some serious problems such as low removal rate, increase defect and scratch, low selectivity, the poor profile etc. This suggests that the CMP performances with the low concentration slurries could be manipulated by controlling of surrounding systems such as dispersion, additive and mixing system. The condition which were slurry of 0.5wt% with dual surfactant and additive which was 0.2wt%, pH6.8, its polymer of 250K molecular weight has been shown the best result.