1T-DRAM 소자의 채널도핑 농도에 따른 메모리 마진 향상 연구

Abstract

We investigated the dependency of the memory margin of 1T-DRAM cells on the boron concentration implanted into the channel region. The memory margin had a maximum value at a specific boron concentration. In particular, the memory margin at a boron concentration of 1.4×1017cm-3 was 1.83 times greater than that at 1.5×1015cm-3. This tendency of the memory margin could be attributed to the memory margin being increased by enlarging the lateral electric field and decreased by reducing the current density. We demonstrated that the highest memory margin could be obtained by optimizing the boron concentration in the channel.