다양한 기판 위에 성장된 ZnO 나노 막대 특성 연구

Abstract

A novel aqueous solution method has been developed for growing well arrayed crystalline ZnO nanorods on a variety of substrates such as Si wafers, glass, ITO, self-made p-type porous silicon and n-type porous silicon. To make the precursor of nanorod, we used various methods including atomic layer deposition (ALD), RF sputtering and ZnO solution dipping. Highly oriented nanorod arrays of ZnO were grown on the surface of the precursor ZnO layer by solution growth process using zinc nitrate and hexamethylenetetramine in equimolar aqueous solution. X-ray diffraction (XRD) analysis confirmed the crystalline nature of ZnO nanorods. The photoluminescence (PL) spectra of the ZnO nanorod samples that were Nitrogen (N)-doped and pure (undoped) rod were measured to study defects of ZnO. The PL peak of the doped ZnO nanorod showed an obvious red-shift, which is comparable to the undoped ZnO nanorod. The ZnO nanorods grown on various substrates that have unique morphologies are dependent on existence of nitrogen. The diameter of ZnO nanorods obtained was controllable according to the concentration of solution, reaction temperature, and time. Thus, we were able to control the diameter and length of ZnO nanorod. The emission properties of various ZnO nanorods were examined due to their nanorod geometry and high aspect ratio.