전기화학적 합성을 통한 CISeS 태양전지의 제조

Abstract

Physical vapor deposition (PVD) technique has been widely used to process the CISe thin film, it requires expensive vacuum equipment and it's difficult to scale up. Recently, the great efforts are concentrated to develop the solar cell devices with large scale, low cost, and high efficiency. Electrochemical process is suitable method for solving these problems, because it has several advantages in cost competitiveness, convenience control in room temperature and atmosphere pressure. In this research, CuInSe2 thin films were deposited on molybdenum-coated soda lime (SL) glass substrates from aqueous baths containing CuSO4, In(SO4)3, SeO2 with Li2SO4 electrolyte, and the concentration of each metal salts was decide to obtain acceptable stoichiometry for solar cell applications. The effects of synthesis parameters such as applied current density, pH, and temperature on the microstructure of CISe thin film were also investigated. CISe thin flim was affected by stirring effect in electrodeposition process because of the width of depletion region. To increase the open circuit voltage, CISe films were annealed in sulfur atmosphere. The results show that the optical bandgap can be controlled by amount of sulfur following sulfurization process. The CISeS film shows single phase without complex graded quaternary alloys.