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dc.contributor.author심종인-
dc.date.accessioned2020-03-05T06:33:43Z-
dc.date.available2020-03-05T06:33:43Z-
dc.date.issued2004-02-
dc.identifier.citationIEEE PHOTONICS TECHNOLOGY LETTERS, v. 16, No. 2, Page. 590 - 592en_US
dc.identifier.issn1041-1135-
dc.identifier.issn1941-0174-
dc.identifier.urihttps://ieeexplore.ieee.org/document/1266500-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/133312-
dc.description.abstractHigh-performance InGaAsP-InP multiple-quantum-well traveling-wave electroabsorption modulators (EAMs) have been developed for analog optical links. A high slope efficiency of >4N at 1.55 mum for a 300-mum-long EAM is measured. A detailed study of the nonlinearity and the spurious-free dynamic range (SFDR) is presented. By optimizing the bias voltage and the input optical power, the SFDR can be improved by 10-30 dB.en_US
dc.language.isoen_USen_US
dc.publisherIEEEen_US
dc.subjectAnalog systemsen_US
dc.subjectelectroabsorptionen_US
dc.subjectintermodulation distortionen_US
dc.subjectmodulation transfer functionsen_US
dc.subjectmodulatorsen_US
dc.subjectoptical linksen_US
dc.titleSlope Efficiency and Dynamic Range of Traveling-Wave Multiple-Quantum-Well Electroabsorption Modulatorsen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LPT.2003.818918-
dc.relation.journalIEEE PHOTONICS TECHNOLOGY LETTERS-
dc.contributor.googleauthorLiu, Bin-
dc.contributor.googleauthorShim, Jongin-
dc.contributor.googleauthorChiu, Yi-jen-
dc.contributor.googleauthorChou, Hsu Feng-
dc.contributor.googleauthorPiprek, Joachim-
dc.contributor.googleauthorBowers, John E.-
dc.relation.code2009203838-
dc.sector.campusE-
dc.sector.daehakCOLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E]-
dc.sector.departmentDEPARTMENT OF PHOTONICS AND NANOELECTRONICS-
dc.identifier.pidjishim-


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