산화아연 원자층증착을 이용한 다결함 다결정 화학기상증착 그래핀의 우수한 전기적 특성 향상

Abstract

Graphene possesses exceptional properties for next-generation nano-electronic applications. Growth of graphene on metal surfaces by chemical vapor deposition (CVD) has emerged as an efficient method for large-scale production of large-area graphene. However, CVD-grown graphene film is in polycrystalline form containing grain boundaries that severely degrade the electrical performance. Here, we used atomic layer deposition (ALD) technique to deposit ZnO selectively on grain boundaries of the CVD grown graphene so as to depress the highly resistive effect of the grain boundaries. The ZnO ALD / Graphene film showed the electrical properties—sheet resistance of 68 Ω/□, mobility around 26,000 cm2V-1s-1—comparable to those of the single crystalline graphene. Notably, ZnO ALD did not compromise the optical transparency and flexibility of the pristine CVD graphene the resultant film shows a visible light transmittance of 96.1 % at wavelength of 550 nm, and sustains up to about 6 % tensile strain. The ZnO ALD / Graphene film was successfully fabricated into a wafer-scale array of field effect transistors, demonstrating ZnO ALD onto CVD-grown graphene as a highly potential route towards commercial graphene-based electronics.